RPM-012PBT97

RPM-012PB
Sensors
1/2
High Sensitivity Chip Sensor, Side veiw
type
RPM-012PB
The RPM-012PB is ultra small size and high sensitivity chip sensor. Original technology, original structure and original
optical design enable to use Automatic mounting machine, Reflow, ultra small size, high sensitivity.
z
zz
z
Application
Optical control equipment
Receiver for sensors
z
zz
z
Features
1) High sensitivity by
φ
2 lenze.
2) Ultra-compact surface mount package.
(3mm x 3mm x 2mm)
3) It is possible to do Reflow.
z
zz
z
External dimensions
(Units : mm)
1.Unspecified tolerance shall be
2-0.4
3
0.8
R1
2
0.25
3
2
Note)
2.Dimension in parenthesis are show for
Internal connection diagram
1
2
+
0.2.
reference.
12
z
zz
z
Absolute maximum ratings
(Ta=25
°
C)
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Parameter Symbol
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Limits
32
5
20
75
30∼+85
40∼+100
Unit
V
V
mA
mW
˚C
˚C
z
zz
z
Electrical and optical characteristics
(Ta=25
°
C)
Dark current
Light current
Peak sensitivity wavelength
Collector-emitter saturation voltage
Response time
Half-angle
Parameter Symbol
I
C
I
CEO
λ
P
V
CE
(sat)
θ
1/2
tr·tf
Min.
0.56
Typ.
1.6
800
±12
10
Max.
2.8
0.5
0.4
Unit
mA
V
CE
=
5V, E
=
500Lx
V
CE
=
10V (Black box)
I
C
=
0.1mA, E
=
500Lx
V
CC
=
5V,
I
C
=
1mA,
R
L
=
100
µA
nm
V
deg
µs
Conditions
RPM-012PB
Sensors
2/2
z
zz
z
Electrical and optical characteristic curves
COLLECTOR CURRENT : I
C
(mA)
ILLUMINANCE : E
(Lx)
Fig.1 Collector currentllluminance
250 5000 750 1000 1250
1
2
0
3
4
V
CE
=5V
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR-EMITTER VOLTAGE : VCE (V)
Fig.2 Output characteristics
10 20030
0
E=250Lx
E=500Lx
E=750Lx
E=1000Lx
1
2
3
4
RELATIVE COLLECTOR CURRENT : I
C
(%)
AMBIENT TEMPERATURE : Ta
C)
Fig.3 Relative outputAmbient temperature
2550 0 25 50 75 100
1
10
100
1000
DARK CURRENT : I
CEO
(nA)
AMBIENT TEMPERATURE : Ta
C)
Fig.4 Dark currentAmbient temperature
2550 0 25 50 75 100
0.01
0.1
1
10
1000
100
10000
V
CE
=10V
V
CE
=20V
V
CE
=30V
RELATIVE SENSITIVITYT : I
C
(%)
OPTICAL WAVELENGTH : λ
(nm)
Fig.5 Spectral sensitivity characteristics
500 600 700400 800 900 1000 1100 1200
20
40
60
80
0
100
RESPONSE TIME : tr
s)
COLLECTOR CURRENT : IC
(mA)
Fig.6 Response time-Collector current
0.1 1 10 100
1
10
1000
100
R
L
=500
R
L
=1k
Ta=25 C
V
CC
=10V
R
L
=100
RELATIVE EMITTING STRENGTH
(%)
ANGULAR DISPLACEMENT : θ
(deg)
10
30
50
70
80
90
90 0 90
20
40
60
100
0
60 30 30 60
Fig.7 Directional pattern(1)
0
−+
RELATIVE EMITTING STRENGTH
(%)
ANGULAR DISPLACEMENT : θ
(deg)
10
30
50
70
80
90
90 0 90
20
40
60
100
0
60 30 30 60
Fig.8 Directional pattern(2)
0
−+

RPM-012PBT97

Mfr. #:
Manufacturer:
Description:
Optical Sensors Phototransistors SMD Side View Phototransisto
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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