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SG2003J

P1-P3P4-P6P7-P7
Rev 1.3b 4/7/2005 Microsemi Inc.
Copyright 1997 11861 Western Avenue
∞ ∞
∞ ∞
∞ Garden Grove, CA 92841
1 (714) 898-8121
∞∞
∞∞
∞ FAX: (714) 893-2570
DESCRIPTION
The SG2000 series integrates seven NPN Darlington pairs with
internal suppression diodes to drive lamps, relays, and solenoids in
many military, aerospace, and industrial applications that require
severe environments. All units feature open collector outputs with
greater than 50V breakdown voltages combined with 500mA
current carrying capabilities. Five different input configurations
provide optimized designs for interfacing with DTL, TTL, PMOS, or
CMOS drive signals. These devices are designed to operate from
-55°C to 125°C ambient temperature in a 16 pin dual in line ceramic
(J) package and 20 pin Leadless Chip Carrier (LCC). The plastic
dual in–line (N) is designed to operate over the commercial
temperature range of 0°C to 70°C.
FEATURES
••
••
• Seven npn Darlington pairs
••
••
• -55°C to 125°C ambient operating temperature range
••
••
• Collector currents to 600mA
••
••
• Output voltages from 50V to 95V
••
••
• Internal clamping diodes for inductive loads
••
••
• DTL, TTL, PMOS, or CMOS compatible inputs
••
••
• Hermetic ceramic package
HIGH RELIABILITY FEATURES
♦♦
♦♦
♦ Available to MIL-STD-883 and DESC SMD
♦♦
♦♦
♦ MIL-M38510/14101BEA - JAN2001J
♦♦
♦♦
♦ MIL-M38510/14102BEA - JAN2002J
♦♦
♦♦
♦ MIL-M38510/14103BEA - JAN2003J
♦♦
♦♦
♦ MIL-M38510/14104BEA - JAN2004J
♦♦
♦♦
♦ Radiation data available
♦♦
♦♦
♦ LMI level "S" processing available
HIGH VOLTAGE MEDIUM
CURRENT DRIVER ARRAYS
PARTIAL SCHEMATICS
SG2000 Series
Rev 1.3b
Copyright 1997 11861 Western Avenue
∞ ∞
∞ ∞
∞ Garden Grove, CA 92841
2 (714) 898-8121
∞∞
∞∞
∞ FAX: (714) 893-2570
ABSOLUTE MAXIMUM RATINGS (Note 1)
Peak Collector Current, I
C
(SG2000, 2020) ......................................................
(SG2010) ................................................................
Operating Junction Temperature
Hermetic (J, L Packages) .........................................
Plastic (N, Packages) ...............................................
Storage Temperature Range ..........................
Lead Temperature (Soldering 10 sec.) .........................
Output Voltage, V
CE
(SG2000, 2010 series) ................................................
(SG2020 series) ..........................................................
Input Voltage, V
IN
(SG2002,3,4) ...............................................................
Continuous Input Current, I
IN
........................................
50V
95V
30V
25mA
500mA
600mA
150°C
150°C
-65°C to 150°C
300°C
Note 1. Values beyond which damage may occur.
J Package:
Thermal Resistance-
Junction to Case, θ
JC
.................. 30°C/W
Thermal Resistance-
Junction to Ambient, θ
JA
............... 80°C/W
N Package:
Thermal Resistance-
Junction to Case, θ
JC
.................. 40°C/W
Thermal Resistance-
Junction to Ambient, θ
JA
.............. 65°C/W
L Package:
Thermal Resistance-
Junction to Case, θ
JC
.................. 35°C/W
Thermal Resistance-
Junction to Ambient, θ
JA
............ 120°C/W
THERMAL DATA
Note A. Junction Temperature Calculation: T
J
= T
A
+ (P
D
x θ
JA
).
Note B. The above numbers for θ
JC
are maximums for the limiting thermal
resistance of the package in a standard mounting configuration.
The θ
JA
numbers are meant to be guidelines for the thermal
performance of the device/pc-board system. All of the above
assume no ambient airflow.
Output Voltage, V
CE
SG2000, SG2010 series ..............................................
SG2020 series .............................................................
50V
95V
Peak Collector Current, I
C
SG2000, SG2020 series ...........................................
SG2010 series ........................................................
Operating Ambient Temperature Range
SG2000 Series - Hermetic ..........................
SG2000 Series - Plastic ..................................
50mA
500mA
-55°C to 125°C
0°C to 70°C
RECOMMENDED OPERATING CONDITIONS (Note 2)
Note 2. Range over which the device is functional.
SELECTION GUIDE
Device V
CE
Max I
C
Max Logic Inputs
SG2001 50V 500mA General Purpose
PMOS, CMOS
SG2002 50V 500mA 14V-25V PMOS
SG2003 50V 500mA 5V TTL, CMOS
SG2004 50V 500mA 6V-15V CMOS, PMOS
SG2011 50V 600mA General Purpose
PMOS, CMOS
SG2012 50V 600mA 14V-25V PMOS
Device V
CE
Max I
C
Max Logic Inputs
SG2013 50V 600mA 5V TTL, CMOS
SG2014 50V 600mA 6V-15V CMOS, PMOS
SG2015 50V 600mA High Output TTL
SG2021 95V 500mA General Purpose
PMOS, CMOS
SG2023 95V 500mA 5V TTL, CMOS
SG2024 95V 500mA 6V-15V CMOS, PMOS
RoHS Peak Package Solder Reflow Temp. (40 sec. max. exp.)...... 260°C (+0, -5)
Rev 1.3b
Copyright 1997 11861 Western Avenue
∞ ∞
∞ ∞
∞ Garden Grove, CA 92841
3 (714) 898-8121
∞∞
∞∞
∞ FAX: (714) 893-2570
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply over the operating ambient temperatures for SG2000 series - Hermetic - with -55°C ≤ T
A
≤ 125°C
and SG2000 series - Plastic - with 0°C ≤ T
A
≤ 70°C. Low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal
to the ambient temperature.)
Parameter Units
Min. Typ. Max.
Limits
Test Conditions
All
SG2002
SG2004
All
SG2002
SG2003
SG2004
All
SG2002
SG2003
SG2004
SG2001
All
All
All
All
All
Applicable
Devices
Temp.
SG2001 thru SG2004
Output Leakage Current (I
CEX
)
Collector - Emitter (V
CE(SAT)
)
Input Current (I
IN(ON)
)
(I
IN(OFF)
)
Input Voltage (V
IN(ON)
)
D-C Forward Current
Transfer Ratio (h
FE
)
Input Capacitance (C
IN
) (Note 3)
Turn-On Delay (TPLH)
Turn-Off Delay (TPHL)
Clamp Diode Leakage Current (I
R
)
Clamp Diode Forward Voltage (V
F
)
T
A
= T
MIN
T
A
= T
MIN
T
A
= T
MIN
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= T
MAX
T
A
= T
MAX
T
A
= T
MAX
T
A
= T
MAX
T
A
= T
MIN
T
A
= T
MAX
T
A
= T
MIN
T
A
= T
MIN
T
A
= T
MIN
T
A
= T
MAX
T
A
= T
MAX
T
A
= T
MAX
T
A
= T
MIN
T
A
= T
MIN
T
A
= T
MIN
T
A
= T
MIN
T
A
= T
MAX
T
A
= T
MAX
T
A
= T
MAX
T
A
= T
MAX
T
A
= T
MIN
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
V
CE
= 50V
V
CE
= 50V, V
IN
= 6V
V
CE
= 50V, V
IN
= 1V
I
C
= 350mA, I
B
= 850µA
I
C
= 200mA, I
B
= 550µA
I
C
= 100mA, I
B
= 350µA
I
C
= 350mA, I
B
= 500µA
I
C
= 200mA, I
B
= 350µA
I
C
= 100mA, I
B
= 250µA
I
C
= 350mA, I
B
= 500µA
I
C
= 200mA, I
B
= 350µA
I
C
= 100mA, I
B
= 250µA
V
IN
= 17V
V
IN
= 3.85V
V
IN
= 5V
V
IN
= 12V
I
C
= 500µA
V
CE
= 2V, I
C
= 300mA
V
CE
= 2V, I
C
= 300mA
V
CE
= 2V, I
C
= 200mA
V
CE
= 2V, I
C
= 250mA
V
CE
= 2V, I
C
= 300mA
V
CE
= 2V, I
C
= 200mA
V
CE
= 2V, I
C
= 250mA
V
CE
= 2V, I
C
= 300mA
V
CE
= 2V, I
C
= 125mA
V
CE
= 2V, I
C
= 200mA
V
CE
= 2V, I
C
= 275mA
V
CE
= 2V, I
C
= 350mA
V
CE
= 2V, I
C
= 125mA
V
CE
= 2V, I
C
= 200mA
V
CE
= 2V, I
C
= 275mA
V
CE
= 2V, I
C
= 350mA
V
CE
= 2V, I
C
= 350mA
V
CE
= 2V, I
C
= 350mA
0.5 E
IN
to 0.5 E
OUT
0.5 E
IN
to 0.5 E
OUT
V
R
= 50V
I
F
= 350mA
480
650
240
650
25
500
1000
1.6
1.3
1.1
1.25
1.1
0.9
1.6
1.3
1.1
850
930
350
1000
50
15
250
250
1.7
100
500
500
1.8
1.5
1.3
1.6
1.3
1.1
1.8
1.5
1.3
1300
1350
500
1450
18
13
3.3
3.6
3.9
2.4
2.7
3.0
6.0
8.0
10
12
5.0
6.0
7.0
8.0
25
1000
1000
50
2.0
µA
µA
µA
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
pF
ns
ns
µA
V
Note 3. These parameters, although guaranteed, are not tested in production.
P1-P3P4-P6P7-P7

SG2003J

Mfr. #:
Buy SG2003J
Manufacturer:
Microchip / Microsemi
Description:
Darlington Transistors Driver - Medium Current Array
Lifecycle:
New from this manufacturer.
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