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DTD113EKT146

P1-P3P4-P6
Datasheet
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
DTD113EK
NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
l
Outline
l
Features
l
Inner circuit
1) Built-In Biasing Resistors, R1 = R2 = 1kW.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors（see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Complementary PNP Types :DTB113EK series
6) Lead Free/RoHS Compliant.
l
Application
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
l
Packaging specifications
Basic
ordering
unit (pcs)
Marking
DTD113EK
SMT3
2928
T146
180
8
3,000
F21
Part No.
Package
Package
size
(mm)
Taping
code
Reel size
(mm)
Tape width
(mm)
I
C(MAX.)
R
1
R
2
Parameter
SMT3
V
CC
DTD113EK
SOT-346 (SC-59)
OUT
IN
GND
1/5
2012.07 - Rev.D
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
DTD113EK
lAbsolute maximum ratings (Ta = 25°C)
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
lElectrical characteristics(Ta = 25°C)
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
MHz
Transition frequency
f
T
*1
V
CE
= 10V, I
E
= -50mA,
f = 100MHz
-
200
-
kW
Resistance ratio
R
2
/R
1
-
0.8
1
1.2
-
Input resistance
R
1
-
0.7
1
1.3
mA
DC current gain
G
I
V
O
= 5V, I
O
= 50mA
33
-
-
-
Output current
I
O(off)
V
CC
= 50V, V
I
= 0V
-
-
0.5
V
Input current
I
I
V
I
= 5V
-
-
7.2
mA
Output voltage
V
O(on)
I
O
/ I
I
= 50mA / 2.5mA
-
0.1
0.3
V
V
I(on)
V
O
= 0.3V, I
O
= 20mA
3.0
-
-
0.5
Input voltage
V
I(off)
V
CC
= 5V, I
O
= 100mA
-
-
T
stg
-55 to +150
°C
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
P
D
*2
200
mW
T
j
150
°C
V
IN
-10 to +10
V
I
C
*1
500
mA
Parameter
Symbol
Values
Unit
V
CC
50
V
2/5
2012.07 - Rev.D
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
DTD113EK
lElectrical characteristic curves(Ta = 25°C)
Fig.1 Input voltage vs. output current
(ON characteristics)
INPUT VOLTAGE : V
I(on)
[V]
OUTPUT CURRENT : I
O
[mA]
Fig.2 Output current vs. input voltage
(OFF characteristics)
OUTPUT CURRENT : I
O
[A]
INPUT VOLTAGE : V
I(off)
[V]
Fig.3 Output current vs. output voltage
OUTPUT CURRENT : I
O
[mA]
OUTPUT VOLTAGE : V
O
[V]
Fig.4 DC current gain vs. output current
DC CURRENT GAIN : G
I
OUTPUT CURRENT : I
O
[mA]
0
100
200
300
400
500
0 2 4 6 8 10
0A
1.0mA
1.5mA
2.0mA
2.5mA
I
I
=
Ta=25ºC
3.0mA
3.5mA
4.0mA
4.5mA
5.0mA
3/5
2012.07 - Rev.D
P1-P3P4-P6

DTD113EKT146

Mfr. #:
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Manufacturer:
Description:
Bipolar Transistors - Pre-Biased NPN 50V 500MA
Lifecycle:
New from this manufacturer.
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