www.irf.com 1
03/31/2010
IRF6706S2TRPbF
IRF6706S2TR1PbF
DirectFET๎ Power MOSFET ๎
Applicable DirectFET Outline and Substrate Outline ๎
Typical values (unless otherwise specified)
DirectFET๎ ISOMETRIC
l RoHS Compliant and Halogen Free ๎
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible ๎
l Ultra Low Package Inductance
l Optimized for High Frequency Switching ๎
l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Application๎
l Compatible with existing Surface Mount Techniques ๎
l 100% Rg tested
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
๎ Click on this section to link to the appropriate technical paper.
๎ Click on this section to link to the DirectFET Website.
๎ Surface mounted on 1 in. square Cu board, steady state.
๎ T
C
measured with thermocouple mounted to top (Drain) of part.
๎
Repetitive rating; pulse width limited by max. junction temperature.
๎ Starting T
J
= 25ยฐC, L = 0.50mH, R
G
= 25โฆ, I
AS
= 13A.
Notes:
S1
S2 SB M2 M4 L4 L6 L8
PD - 97485
0 2 4 6 8 10 12 14 16 18 20
V
GS,
Gate -to -Source Voltage (V)
0
5
10
15
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
โฆ
)
I
D
= 17A
T
J
= 25ยฐC
T
J
= 125ยฐC
0 102030
Q
G
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 20V
V
DS
= 13V
I
D
= 13A
S1
DD
G
S
Description
The IRF6706S2TRPbF combines the latest HEXFETยฎ Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6706S2TRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6706S2TRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
V
DSS
V
GS
R
DS(on)
R
DS(on)
25V max ยฑ20V max
3.0mโฆ@10V 5.2mโฆ@4.5V
Absolute Maximum Ratin
s
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25ยฐC
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70ยฐC
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25ยฐC
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
13
42
Max.
13
63
130
ยฑ20
25
17
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
13nC 4.4nC 1.8nC 21nC 9.5nC 1.8V
