IRF6706S2TRPBF Datasheet IRF6706S2TR1PBF, IRF6706S2TRPBF | P4-P6

IRF6706S2TR/TR1PbF

4 www.irf.com

Fig 5. Typical Output Characteristics

Fig 4. Typical Output Characteristics

Fig 6. Typical Transfer Characteristics

Fig 7. Normalized On-Resistance vs. Temperature

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage

Fig 9. Typical On-Resistance vs.

Drain Current and Gate Voltage

0.1 1 10 100 1000

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP 10V

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

BOTTOM 2.5V

≤

60µs PULSE WIDTH

Tj = 25°C

2.5V

0.1 1 10 100 1000

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.5V

≤

60µs PULSE WIDTH

Tj = 175°C

VGS

TOP 10V

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

BOTTOM 2.5V

1 2 3 4 5

V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

T

J

= 175°C

T

J

= 25°C

T

J

= -40°C

V

DS

= 15V

≤

60µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100120140160180

T

J

, Junction Temperature (°C)

0.5

1.0

1.5

2.0

T

y

p

i

c

a

l

R

D

S

(

o

n

)

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 17A

V

GS

= 10V

V

GS

= 4.5V

1 10 100

V

DS

, Drain-to-Source Voltage (V)

100

1000

10000

C

,

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

V

GS

= 0V, f = 1 MHZ

C

iss

= C

gs

+ C

gd

, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

C

oss

C

rss

C

iss

0 25 50 75 100 125 150

I

D

, Drain Current (A)

0

5

10

15

20

25

T

y

p

i

c

a

l

R

D

S

(

o

n

)

(

m

Ω

)

T

J

= 25°C

Vgs = 4.0V

Vgs = 4.5V

Vgs = 5.0V

Vgs = 10V

IRF6706S2TR/TR1PbF

www.irf.com 5

Fig 13. Typical Threshold Voltage vs. Junction

Temperature

Fig 12. Maximum Drain Current vs. Case Temperature

Fig 10. Typical Source-Drain Diode Forward Voltage

Fig 11. Maximum Safe Operating Area

Fig 15. Maximum Avalanche Energy

vs. Drain Current

Fig 14. Typ. Forward Transconductance

vs. Drain Current

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

V

SD

, Source-to-Drain Voltage (V)

0

1

10

100

1000

I

S

D

,

R

e

v

e

r

s

e

D

r

a

i

n

C

u

r

e

n

t

(

A

)

T

J

= 175°C

T

J

= 25°C

T

J

= -40°C

V

GS

= 0V

25 50 75 100 125 150 175

T

C

, Case Temperature (°C)

0

10

20

30

40

50

60

70

I

D

,

D

r

a

i

n

C

u

r

e

n

t

(

A

)

-75 -50 -25 0 25 50 75 100 125 150 175

T

J

, Temperature ( °C )

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T

y

p

i

c

a

l

V

G

S

(

t

h

)

G

a

t

e

t

h

r

e

s

h

o

l

d

V

o

l

t

a

g

e

(

V

)

I

D

= 25µA

I

D

= 250µA

I

D

= 1.0mA

I

D

= 1.0A

25 50 75 100 125 150 175

Starting T

J

, Junction Temperature (°C)

0

20

40

60

80

100

120

140

160

180

E

A

S

,

S

i

n

g

l

e

P

u

l

s

e

A

v

a

l

a

n

c

h

e

E

n

e

r

g

y

(

m

J

)

I

D

TOP 2.3A

5.6A

BOTTOM 13A

0.01 0.10 1.00 10.00 100.00

V

DS

, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

OPERATION IN THIS AREA

LIMITED BY R

DS

(on)

T

A

= 25°C

T

J

= 150°C

Single Pulse

100µsec

1msec

10msec

DC

0 102030405060

I

D

,Drain-to-Source Current (A)

0

20

40

60

80

100

G

f

s

,

F

o

r

w

a

r

d

T

r

a

n

s

c

o

n

d

u

c

t

a

n

c

e

(

S

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 4.5V

380µs PULSE WIDTH

IRF6706S2TR/TR1PbF

6 www.irf.com

Fig 16. Typical Avalanche Current vs.Pulsewidth

Fig 17. Maximum Avalanche Energy

vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 16, 17:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T

jmax

. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asT

jmax

is

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 19a, 19b.

4. P

D (ave)

= Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

av

= Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed

T

jmax

(assumed as 25°C in Figure 16, 17).

t

av =

Average time in avalanche.

D = Duty cycle in avalanche = t

av

·f

Z

thJC

(D, t

av

) = Transient thermal resistance, see figure 11)

P

D (ave)

= 1/2 ( 1.3·BV·I

av

) = DT/ Z

thJC

I

av

=

2DT/ [1.3·BV·Z

th

]

E

AS (AR)

= P

D (ave)

·t

av

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02

tav (sec)

0.01

0.1

1

10

100

A

v

a

l

a

n

c

h

e

C

u

r

e

n

t

(

A

)

0.05

Duty Cycle = Single Pulse

0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ∆ Tj = 25°C and

Tstart = 150°C.

0.01

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming DTj = 150°C and

Tstart =25°C (Single Pulse)

25 50 75 100 125 150 175

Starting T

J

, Junction Temperature (°C)

0

10

20

30

40

50

E

A

R

,

A

v

a

l

a

n

c

h

e

E

n

e

r

g

y

(

m

J

)

Single Pulse

I

D

= 13A

IRF6706S2TRPBF

IRF6706S2TRPBF

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