U1GWJ49(TE12L,F) Datasheet U1GWJ49(TE12L,F) | P1-P3

U1GWJ49

2006-11-13

TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE

U1GWJ49

HIGH SPEED RECTIFIER APPLICATIONS

z Average Forward Current : I

F (AV)

= 1.0A

z Low Forward Voltage : V

= 0.55V (Max)

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C)

CHARACTERISTIC SYMBOL RATING UNIT

Repetitive Peak Reverse Voltage V

RRM

40 V

Average Forward Current I

F (AV)

1.0 A

15 (50 Hz)

Peak One Cycle Surge Forward

Current (Non−Repetitive)

FSM

16.5 (60 Hz)

Junction Temparature T

−40~125 °C

Storage Temparature Range T

stg

−40~125 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

ELECTRICAL CHARACTERISTICS

(Ta = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT

Peak Forward Voltage V

= 1.0A ― ― 0.55 V

Repetitive Peak Reverse Current I

RRM

= 40V ― ― 0.5 mA

Junction Capacitance C

= 10V, f = 1MHz ― 50 ― pF

Thermal Resistance R

(j−a)

Junction to Ambient ― ― 125 °C / W

MARKING

Abbreviation Code Part No.

SG U1GWJ49

Unit: mm

JEDEC ⎯

JEITA ⎯

TOSHIBA 3-5E1A

Weight: 0.05 g (typ.)

S G

Part No. (or abbreviation code)

Lot No.

line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

U1GWJ49

2006-11-13

Handling Precaution

Schottky barrier diodes have reverse current characteristics compared to other diodes.

There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.

Please take forward and reverse loss into consideration during design.

The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be

exceeded during operation, even for an instant. The following are the general derating methods that we recommend

when you design a circuit with a device.

RRM

: Use this rating with reference to the above. V

RRM

has a temperature coefficient of 0.1%/°C. Take

this temperature coefficient into account designing a device at low temperature.

F(AV)

: We recommend that the worst case current be no greater than 80% of the absolute maximum rating

of I

F(AV)

and T

be below 100°C. When using this device, take the margin into consideration by

using an allowable Tamax-I

F(AV)

curve.

FSM

: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,

which seldom occurs during the lifespan of the device.

: Derate this rating when using a device in order to ensure high reliability. We recommend that the

device be used at a T

of below 100°C.

Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When

using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value.

Please refer to the Rectifiers databook for further information.

U1GWJ49

2006-11-13

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U1GWJ49(TE12L,F)

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