FFSD0865A

FFSD0865A
www.onsemi.com
4
TYPICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
Figure 7. Capacitance Stored Energy
Figure 8. Junction−to−Case Transient Thermal Response Curve
0.1 1 10 100 650
10
100
1000
CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (V)
0
0
10
20
30
40
Q
C
, CAPACITIVE CHARGE (nC)
V
R
, REVERSE VOLTAGE (V)
0
2
4
6
8
10
E
C
, CAPACITIVE ENERGY (mJ)
V
R
, REVERSE VOLTAGE (V)
10
−6
10
−5
10
−4
10
−3
10
−2
1
0.001
0.01
0.1
1
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
DUTY CIRCLE−DESCENDING ORDER
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
2
t, RECTANGULAR PULSE DURATION (sec)
NOTES:
Z
qJC
(t) = r(t) x R
qJC
R
qJC
= 1.2
o
C/W
Duty Cycle, D = t
1
/ t
2
Peak T
J
= P
DM
x Z
qJC
(t) + T
C
P
DM
t
1
t
2
100 200 300 400 500 600 650
0 100 200 300 400 500 600 650
FFSD0865A
www.onsemi.com
5
TYPICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
L = 0.5mH
FFSD0865A
www.onsemi.com
6
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE O

FFSD0865A

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 650V 8A SIC SBD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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