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FFSD0865A
P1-P3
P4-P6
P7-P7
FFSD0865A
www
.onsemi.com
4
TYPICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Figure 5. Capacitive Charge vs. Reverse V
oltage
Figure 6. Capacitance vs. Reverse V
oltage
Figure 7. Capacitance Stored Energy
Figure 8. Junction−to−Case T
ransient Thermal Response Curve
0.1
1
10
100
650
10
100
1000
CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (V)
0
0
10
20
30
40
Q
C
, CAPACITIVE CHARGE (nC)
V
R
, REVERSE VOLTAGE (V)
0
2
4
6
8
10
E
C
, CAPACITIVE ENERGY (
m
J)
V
R
, REVERSE VOLTAGE (V)
10
−6
10
−5
10
−4
10
−3
10
−2
1
0.001
0.01
0.1
1
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
DUTY CIRCLE−DESCENDING ORDER
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
2
t, RECTANGULAR PULSE DURATION (sec)
NOTES:
Z
q
JC
(t) = r(t) x R
q
JC
R
q
JC
= 1.2
o
C/W
Duty Cycle, D = t
1
/ t
2
Peak T
J
= P
DM
x Z
q
JC
(t) + T
C
P
DM
t
1
t
2
100
200
300
400
500
600
650
0
100
200
300
400
500
600
650
FFSD0865A
www
.onsemi.com
5
TYPICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Figure 9. Unclamped Inductive Switching T
est Circuit & W
aveform
L = 0.5mH
FFSD0865A
www
.onsemi.com
6
P
ACKAGE DIMENSIONS
DP
AK3 (TO−252 3 LD)
CASE 369AS
ISSUE O
P1-P3
P4-P6
P7-P7
FFSD0865A
Mfr. #:
Buy FFSD0865A
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 650V 8A SIC SBD
Lifecycle:
New from this manufacturer.
Delivery:
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FFSD0865A