IPC60N04S4L06ATMA1

P1-P3 P4-P6 P7-P9

IPC60N04S4L-06

OptiMOS

TM

-T2 Power-Transistor

Features

• N-channel Logic Level - Enhancement mode

• AEC qualified

• MSL1 up to 260°C peak reflow

• Green product (RoHS compliant)

• 100% Avalanche tested

• Feasible for automatic optical inspection (AOI)

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

C

=25°C,

T

J

=175°C,

V

GS

=10V

60

1)

A

T

C

=100 °C,

T

J

=175°C,

V

GS

=10 V

58

1, 2)

Pulsed drain current

2)

I

D,pulse

T

C

=25 °C

240

Avalanche energy, single pulse

E

AS

I

D

=30 A

120 mJ

Avalanche current, single pulse

I

AS

-

60 A

Gate source voltage

V

GS

-±16V

Power dissipation

P

tot

T

C

=25 °C,

T

J

=175°C

63 W

Operating and storage temperature

T

j

, T

stg

-

-55 ... +175

3)

°C

Value

V

DS

40 V

R

DS(on)

5.6

m

I

D

60 A

Product Summary

PG-TDSON-8-23

Type Package Marking

IPC60N04S4L-06 PG-TDSON-8-23 4N04L06

1

1

R

ev. 1.0 page 1 2015-05-22

IPC60N04S4L-06

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

R

thJC

---2.4K/W

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0 V, I

D

= 1 mA

40 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

= 30µA

1.2 1.7 2.2

Zero gate voltage drain current

I

DSS

V

DS

=40 V, V

GS

=0 V,

T

j

=25 °C

-0.011µA

V

DS

=18 V, V

GS

=0 V,

T

j

=85 °C

2)

-120

Gate-source leakage current

I

GSS

V

GS

=16 V, V

DS

=0 V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=10 V, I

D

= 30A

-4.85.6

m

V

GS

=4.5 V, I

D

=30 A

-6.57.9

Values

R

ev. 1.0 page 2 2015-05-22

IPC60N04S4L-06

Parameter Symbol Conditions Unit

min. typ. max.

D

y

namic characteristics

2)

Input capacitance

C

iss

- 2763 3600 pF

Output capacitance

C

oss

- 514 670

Reverse transfer capacitance

C

rss

-2354

Turn-on delay time

t

d(on)

-4-ns

Rise time

t

r

-5-

Turn-off delay time

t

d(off)

-15-

Fall time

t

f

-15-

Gate Char

g

e Characteristics

2)

Gate to source charge

Q

gs

- 9 12 nC

Gate to drain charge

Q

gd

-49

Gate charge total

Q

g

-3546

Gate plateau voltage

V

plateau

-3.2-V

Reverse Diode

Diode continous forward current

2)

I

S

--60A

Diode pulse current

2)

I

S,pulse

- - 240

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=30 A,

T

j

=25 °C

-0.91.3V

Reverse recovery time

2)

t

rr

-37-ns

Reverse recovery charge

2)

Q

rr

-33-nC

2)

Defined by design. Not subject to production test.

3)

T

J

> 150°C is limited to 200h operation time over life time of the device

1)

Current is limited by package; with an R

thJC

= 2.4 K/W the chip is able to carry 81 A at 25°C.

Values

V

GS

=0 V, V

DS

=25 V,

f=1 MHz

V

DD

=20 V, V

GS

=10 V,

I

D

=60 A, R

G

=3.5 

V

DD

=32 V, I

D

=60 A,

V

GS

=0 to 10 V

V

R

=20 V, I

F

=50A,

di

F

/dt=100 A/µs

T

C

=25 °C

R

ev. 1.0 page 3 2015-05-22

P1-P3 P4-P6 P7-P9

IPC60N04S4L06ATMA1

Mfr. #:

Buy IPC60N04S4L06ATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH 8TDSON

Lifecycle:

New from this manufacturer.

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IPC60N04S4L06ATMA1