ITA6V1U1

November 2007 Rev 2 1/8
8
ITAxxU1
Transil™ array for data line protection
Features
High surge capability Transil array:
I
PP
= 40 A (8/20 µs)
Peak pulse power : 300 W (8/20 µs)
Up to 6 bidirectional Transil functions
Low clamping factor (V
CL
/ V
BR
) at high current
level
Low leakage current
ESD protection up to 15 kV
Complies with the following standards
IEC 61000-4-2 level 4
15 kV (air discharge)
8 kV (contact discharge)
MIL STD 883G- Method 3015-7: class 3B
25 kV (human body model)
Applications
Data transmission lines protection, such as:
Unipolar signal up to 5.5 V
Bipolar signal in the ± 2.5 V range
Description
Transil diode arrays provide high overvoltage
protection by clamping action. Their
instantaneous response to transient overvoltages
makes them particularly suited to protect voltage
sensitive devices such as MOS technology and
low voltage supplied IC’s.
The ITA series allies high surge capability against
energetic pulses with high voltage performance
against ESD.
TM: Transil is a trademark of STMicroelectronics
Figure 1. Functional diagram
SO-8
1
2
3
4
I/O1
I/O2
I/O3
I/O4
GND
GND
I/O5
I/O6
8
7
6
5
www.st.com
Characteristics ITAxxU1
2/8
1 Characteristics
Table 1. Absolute ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
P
PP
Peak pulse power (8/20 µs)
(1)
1. For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit
caused by the wire melting.
T
j
initial = T
amb
300 W
I
PP
Peak pulse current (8/20 µs)
(1)
T
j
initial = T
amb
40 A
I
2
tWire I
2
t value
(1)
0.6 A
2
s
T
j
Maximum operating junction temperature 125 °C
T
stg
Storage temperature range -55 to +150 °C
T
L
Maximum lead temperature for soldering during 10 s 260 °C
Table 2. Electrical characteristics (T
amb
= 25 °C)
Symbol Parameter
V
RM
Stand-off voltage
V
BR
Breakdown voltage
V
CL
Clamping voltage
I
RM
Leakage current
I
PP
Peak pulse current
αT Voltage temperature coefficient
V
F
Forward voltage drop
C Capacitance
Order code
V
BR
@ I
R
I
RM
@ V
RM
V
CL
@ I
PP
V
CL
@ I
PP
αTCV
F
@ I
F
min.
max.
max. 8/20 µs max. 8/20 µs max. max. max.
(1)
1. Between I/O pin and ground.
(1) (1) (2)
2. Between two input pins at 0 V Bias, F = 1 MHz.
VmAµAVVAVA10
-4
/ °C pF V A
ITA6V1U1 6.51 1 10 5 10 10 12 25 4 1500 1.3 1
V
CL
V
BR
V
RM
V
F
I
F
I
RM
I
PP
I
V
ITAxxU1 Characteristics
3/8
Figure 2. Pulse waveform Figure 3. Typical peak pulse power versus
exponential pulse duration
%I
PP
t
8µs
100
50
0
20µs
Pulse waveform 8/20µs
1E-3
1E-2 1E-1
1E+0
1E+1
10
100
1000
P
PP
(W)
T
j
initial=25°C
t
P
(ms) expo
Figure 4. Clamping voltage versus peak
pulse current (exponential
waveform 8/20 µs)
Figure 5. Peak current I
DC
inducing open
circuit of the wire for one
input/output versus pulse duration
(typical values)
V
CL
(V)
T
j
initial=25°C
I
PP
(A)
1E+00
1E+01
1E+02
1E+03
1E-01 1E+00 1E+01 1E+02
%I
PP
t
r
100
50
0
t
p
t
I
DC
(A)
t
P
(ms)
1E+00
1E+01
1E+02
1E+03
1E-02 1E-01 1E+00 1E+01
Exponential waveform
Figure 6. Junction capacitance versus
reverse applied voltage for one
input/output (typical values)
Figure 7. Relative variation of leakage
current versus junction
temperature
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
500
750
1000
1250
1500
C(pF)
V
R
(V)
T
j
=25°C
F=1MHz
5E+3
1E+3
1E+2
1E+1
0 25 50 75 100 125 150
1E+0
1E-1
T
j
(°C)
I
R
(T )
I (T =25°C)
j
Rj
V
R
=V
RM

ITA6V1U1

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
ESD Suppressors / TVS Diodes 6.1V 300W Unidirect
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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