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IRF6617TR1

P1-P3P4-P6P7-P9
www.irf.com 1
11/3/05
IRF6617
DirectFET Power MOSFET
Notes through are on page 2
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with Existing Surface Mount Techniques
Description
The IRF6617 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET
TM
packaging to
achieve the lowest on-state resistance in a package that has the footprint of a Micro8™ and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth-
ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv-
ing previous best thermal resistance by 80%.
The IRF6617 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6617 has been optimized for parameters that are
critical in synchronous buck converters including R
DS(on)
and gate charge to minimize losses in the control FET socket.
DirectFET ISOMETRIC
ST
Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)
SQ SX ST MQ MX MT
V
DSS
R
DS(on)
max
Qg(typ.)
30V
8.1m
Ω
@V
GS
= 10V
11nC
10.3m
Ω
@V
GS
= 4.5V
PD -95847B
Absolute Maximum Ratin
g
s
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Power Dissipation
P
D
@T
A
= 25°C
Power Dissipation
W
P
D
@T
A
= 70°C
Power Dissipation
E
AS
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θJA
Junction-to-Ambient ––– 58
R
θJA
Junction-to-Ambient 12.5 –––
R
θJA
Junction-to-Ambient 20 ––– °C/W
R
θJC
Junction-to-Case ––– 3.0
R
θJ-PCB
Junction-to-PCB Mounted 1.0 –––
Max.
14
11
120
±20
30
55
-40 to + 150
42
0.017
2.1
1.4
27
12
IRF6617
2 www.irf.com
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 0.40mH,
R
G
= 25Ω, I
AS
= 12A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in. square Cu board.
Notes:
Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermal couple mounted to top (Drain) of part.
R
θ
is measured at T
J
of approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 25 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 6.2 8.1
mΩ
––– 7.9 10.3
V
GS(th)
Gate Threshold Voltage 1.35 ––– 2.35 V
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient ––– -5.4 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 39 ––– ––– S
Q
g
Total Gate Charge ––– 11 17
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 3.1 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.0 ––– nC
Q
gd
Gate-to-Drain Charge ––– 4.0 –––
Q
godr
Gate Charge Overdrive ––– 2.9 ––– See Fig. 16
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 5.0 –––
Q
oss
Output Charge ––– 10 ––– nC
t
d(on)
Turn-On Delay Time ––– 11 –––
t
r
Rise Time ––– 34 –––
t
d(off)
Turn-Off Delay Time ––– 12 ––– ns
t
f
Fall Time ––– 3.7 –––
C
iss
Input Capacitance ––– 1300 –––
C
oss
Output Capacitance ––– 430 ––– pF
C
rss
Reverse Transfer Capacitance ––– 160 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 53
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 120
(Body Diode)c
V
SD
Diode Forward Voltage ––– 0.81 1.0 V
t
rr
Reverse Recovery Time ––– 16 24 ns
Q
rr
Reverse Recovery Charge ––– 7.2 11 nC
MOSFET symbol
Clamped Inductive Load
V
DS
= 15V, I
D
= 12A
Conditions
ƒ = 1.0MHz
V
DS
= 15V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5Ve
V
DS
= 15V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
GS
= 4.5V
V
GS
= 4.5V, I
D
= 12A e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A e
T
J
= 25°C, I
F
= 12A
di/dt = 100A/µs e
T
J
= 25°C, I
S
= 12A, V
GS
= 0V e
showing the
integral reverse
p-n junction diode.
I
D
= 12A
V
GS
= 0V
V
DS
= 15V
I
D
= 12A
IRF6617
www.irf.com 3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 25°C
2.5V
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM 2.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 150°C
2.5V
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM 2.5V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 5 10 15 20 25 30
Q
G
Total Gate Charge (nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
VDS= 15V
I
D
= 12A
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 15A
V
GS
= 10V
1.0 2.0 3.0 4.0 5.0 6.0
V
GS
, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
V
DS
= 15V
≤
60µs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
P1-P3P4-P6P7-P9

IRF6617TR1

Mfr. #:
Buy IRF6617TR1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 14A DIRECTFET
Lifecycle:
New from this manufacturer.
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