Document Number: 83627 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 2.0, 29-Mar-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Optocoupler, Phototriac Output, Zero Crossing,
High dV/dt, Low Input Current
IL410, IL4108
Vishay Semiconductors
DESCRIPTION
The IL410 and IL4108 consists of a GaAs IRLED optically
coupled to a photosensitive zero crossing TRIAC network.
The TRIAC consists of two inverse parallel connected
monolithic SCRs. These three semiconductors are
assembled in a six pin dual in-line package.
High input sensitivity is achieved by using an emitter
follower phototransistor and a cascaded SCR predriver
resulting in an LED trigger current of less than 2 mA (DC).
The use of a proprietary dV/dt clamp results in a static dV/dt
of greater than 10 kV/ms. This clamp circuit has a MOSFET
that is enhanced when high dV/dt spikes occur between
MT1 and MT2 of the TRIAC. When conducting, the FET
clamps the base of the phototransistor, disabling the first
stage SCR predriver.
The zero cross line voltage detection circuit consists of two
enhancement MOSFETS and a photodiode. The inhibit
voltage of the network is determined by the enhancement
voltage of the N-channel FET. The P-channel FET is enabled
by a photocurrent source that permits the FET to conduct
the main voltage to gate on the N-channel FET. Once the
main voltage can enable the N-channel, it clamps the base
of the phototransistor, disabling the first stage SCR
predriver.
The 600 V, 800 V blocking voltage permits control of off-line
voltages up to 240 V
AC
, with a safety factor of more than
two, and is sufficient for as much as 380 V
AC
.
The IL410, IL4108 isolates low-voltage logic from 120 V
AC
,
240 V
AC
, and 380 V
AC
lines to control resistive, inductive, or
capacitive loads including motors, solenoids, high current
thyristors or TRIAC and relays.
FEATURES
High input sensitivity
•I
FT
= 2 mA, PF = 1.0
•I
FT
= 5 mA, PF 1.0
300 mA on-state current
Zero voltage crossing detector
600 V, 800 V blocking voltage
High static dV/dt 10 kV/μs
Very low leakage < 10 A
Isolation test voltage 5300 V
RMS
Small 6 pin DIP package
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
Solid-state relays
Industrial controls
Office equipment
Consumer appliances
AGENCY APPROVALS
UL1577, file no. E52744 system code H, double protection
CSA 93751
DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
(pending), available with option 1
Note
(1)
Also available in tubes, do not put T on the end.
i179030_4
1
2
3
6
5
4
MT2
MT1
NC
A
C
NC
*Zero crossing circuit
ZCC*
V
DE
21842-1
ORDERING INFORMATION
IL410#-X0##T
PART NUMBER PACKAGE OPTION TAPE AND
REEL
AGENCY CERTIFIED/PACKAGE BLOCKING VOLTAGE V
DRM
(V)
UL 600 800
DIP-6 IL410 IL4108
DIP-6, 400 mil, option 6 IL410-X006 IL4108-X006
SMD-6, option 7 IL410-X007T
(1)
IL4108-X007T
(1)
SMD-6, option 8 IL410-X008T -
SMD-6, option 9 IL410-X009T
(1)
IL4108-X009T
(1)
VDE, UL 600 800
DIP-6 IL410-X001 IL4108-X001
DIP-6, 400 mil, option 6 IL410-X016 IL4108-X016
SMD-6, option 7 IL410-X017 IL4108-X017
SMD-6, option 9 IL410-X019T
(1)
-
> 0.1 mm
10.16 mm
> 0.7 mm
7.62 mm
DIP-#
Option 7
Option 6
Option 9
9.27 mm
Option 8
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83627
2 Rev. 2.0, 29-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IL410, IL4108
Vishay Semiconductors
Optocoupler, Phototriac Output, Zero Crossing,
High dV/dt, Low Input Current
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
Forward current I
F
60 mA
Surge current I
FSM
2.5 A
Power dissipation P
diss
100 mW
Derate from 25 °C 1.33 mW/°C
OUTPUT
Peak off-state voltage
IL410 V
DRM
600 V
IL4108 V
DRM
800 V
RMS on-state current I
TM
300 mA
Single cycle surge current 3A
Total power dissipation P
diss
500 mW
Derate from 25 °C 6.6 mW/°C
COUPLER
Isolation test voltage
between emitter and detector
t = 1 s V
ISO
5300 V
RMS
Pollution degree (DIN VDE 0109) 2
Creepage distance 7mm
Clearance distance 7mm
Comparative tracking index per
DIN IEC112/VDE 0303 part 1, group IIIa
per DIN VDE 6110
CTI 175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
10
12
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Storage temperature range T
stg
- 55 to + 150 °C
Ambient temperature T
amb
- 55 to + 100 °C
Soldering temperature
(1)
max. 10 s dip soldering
0.5 mm from case bottom
T
sld
260 °C
Document Number: 83627 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 2.0, 29-Mar-11 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IL410, IL4108
Optocoupler, Phototriac Output, Zero Crossing,
High dV/dt, Low Input Current
Vishay Semiconductors
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 10 mA V
F
1.16 1.35 V
Reverse current V
R
= 6 V I
R
0.1 10 μA
Input capacitance V
F
= 0 V, f = 1 MHz C
IN
25 pF
Thermal resistance, junction to ambient R
thja
750 °C/W
OUTPUT
Off-state current
V
D
= V
DRM
, T
amb
= 100 °C,
I
F
= 0 mA
I
DRM
10 100 μA
On-state voltage I
T
= 300 mA V
TM
1.7 3 V
Surge (non-repetitive), on-state current f = 50 Hz I
TSM
3A
Trigger current 1 V
D
= 5 V I
FT1
2mA
Trigger current 2
V
D
= 220 V
RMS
, f = 50 Hz,
T
j
= 100 °C, t
pIF
> 10 ms
I
FT2
6mA
Trigger current temp. gradient
I
FT1
/T
j
714μA/°C
I
FT2
/T
j
714μA/°C
Inhibit voltage temp. gradient V
DINH
/T
j
- 20 mV/°C
Off-state current in inhibit state I
F
= I
FT1
, V
D
= V
DRM
I
DINH
50 200 μA
Holding current I
H
65 500 μA
Latching current V
T
= 2.2 V I
L
500 μA
Zero cross inhibit voltage I
F
= rated I
FT
V
IH
15 25 V
Critical rate of rise of off-state voltage
V
D
= 0.67 V
DRM
, T
j
= 25 °C dV/dt
cr
10 000 V/μs
V
D
= 0.67 V
DRM
, T
j
= 80 °C dV/dt
cr
5000 V/μs
Critical rate of rise of voltage at current
commutation
V
D
= 230 V
RMS
,
I
D
= 300 mA
RMS
, T
J
= 25 °C
dV/dt
crq
8V/μs
V
D
= 230 V
RMS
,
I
D
= 300 mA
RMS
, T
J
= 85 °C
dV/dt
crq
7V/μs
Critical rate of rise of on-state current
commutation
V
D
= 230 V
RMS
,
I
D
= 300 mA
RMS
, T
J
= 25 °C
dI/dt
crq
12 A/ms
Thermal resistance, junction to ambient R
thja
150 °C/W
COUPLER
Critical rate of rise of coupled
input/output voltage
I
T
= 0 A, V
RM
= V
DM
= V
DRM
dV
IO
/dt 10 000 V/μs
Common mode coupling capacitance C
CM
0.01 pF
Capacitance (input to output) f = 1 MHz, V
IO
= 0 V C
IO
0.8 pF
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
10
12
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
SWITCHING CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Turn-on time V
RM
= V
DM
= V
DRM
t
on
35 μs

IL410

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Triac & SCR Output Optocouplers Phototriac Output Zero Crossing
Lifecycle:
New from this manufacturer.
Delivery:
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