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NSR0340P2T5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2008
March, 2017 − Rev. 1
1 Publication Order Number:
NSR0340P2/D
NSR0340P2
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0340P2 in a SOD−923 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
Features
• Very Low Forward Voltage Drop − 420 mV @ 100 mA
• Low Reverse Current − 0.6 mA @ 10 V
• Continuous Forward Current − 200 mA
• Power Dissipation with Minimum Trace − 190 mW
• Very High Switching Speed − 3.0 ns @ 10 mA
• Low Capacitance − 4 pF @ 5.0 V
• This is a Pb−Free Device
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
Markets
• Mobile Handsets
• MP3 Players
• Digital Camera and Camcorders
• Notebook PCs & PDAs
• GPS
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
40 V
Forward Current (DC) I
F
200 mA
Non−Repetitive Peak Forward Surge
Current
I
FSM
1.0 A
ESD Rating: Human Body Model
Machine Model
ESD Class 2
Class A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
40 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
www.onsemi.com
Device Package Shipping†
ORDERING INFORMATION
NSR0340P2T5G SOD−923
(Pb−Free)
2 mm Pitch
8000 / Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SOD−923
CASE 514AB
R = Specific Device Code
M = Month Code
MARKING
DIAGRAM
M
1
2
12
R
NSR0340P2
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
520
190
°C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
175
570
°C/W
mW
Junction and Storage Temperature Range T
J
, T
stg
−55 to +125 °C
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Leakage
(V
R
= 10 V)
(V
R
= 40 V)
I
R
0.6
4.0
5.0
20
mA
Forward Voltage
(I
F
= 10 mA)
(I
F
= 100 mA)
(I
F
= 200 mA)
V
F
290
420
520
320
460
560
mV
Total Capacitance
(V
R
= 5.0 V, f = 1 MHz)
CT
4.0
pF
Reverse Recovery Time
(I
F
= I
R
= 10 mA, I
R
= 1.0 mA)
t
rr
3.0
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. DC Current Source is adjusted for a Forward Current (I
F
) of 10 mA.
2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current I
RM
of 10 mA.
3. Pulse Generator transition time << t
rr
.
4. I
R(REC)
is measured at 1 mA. Typically 0.1 X I
RM
or 0.25 X I
RM
.
5. t
p
» t
rr
R
L
= 50 W
Current
Transformer
DUT
750 mH
0.1 mF
50 W Output
Pulse
Generator
t
r
t
p
10%
90%
I
F
I
RM
t
rr
i
R(REC)
= 1 mA
Output Pulse
(I
F
= I
RM
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
Pulse Generator
Output
Figure 1. Recovery Time Equivalent Test Circuit
50 W Input
Oscilloscope
0.1 mF
0 V
V
R
DC Current
Source
Adjust for I
RM
+−
NSR0340P2
www.onsemi.com
3
TYPICAL CHARACTERISTICS
0.1
1
10
100
1000
0 0.1 0.2 0.3 0.4 0.5 0.6
V
F
, FORWARD VOLTAGE (V)
Figure 2.
25°C
85°C
125°C
−40°C
I
F
, FORWARD CURRENT (mA)
0.0001
0.001
0.1
1
10
100
1000
10000
0 5 10 15 20 25 30 35 40
0.01
V
R
, REVERSE VOLTAGE (V)
Figure 3.
I
R
, REVERSE CURRENT (mA)
25°C
85°C
125°C
−40°C
1
3
5
7
9
11
13
0 5 10 15 20 25 30 35 40
V
R
, REVERSE VOLTAGE (V)
Figure 4.
C
t
, TOTAL CAPACITANCE (pF)
P1-P3P4-P4

NSR0340P2T5G

Mfr. #:
Buy NSR0340P2T5G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 40V SCHOTTKY DIODE SOD923
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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