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VS-10ETF04PBF

P1-P3P4-P6P7-P9P10-P10
SQ4946AEY
www.vishay.com
Vishay Siliconix
S15-1462-Rev. F, 15-Jun-15
1
Document Number: 71506
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• 100 % R
g
and UIS tested
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please
see www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
(Ω) at V
GS
= 10 V 0.040
R
DS(on)
(Ω) at V
GS
= 4.5 V 0.055
I
D
(A) per leg 7
Configuration Dual
Top View
SO-8 Dual
1
S
1
2
G
1
3
S
2
1
2
G
3
S
2
4
G
2
D
1
7
D
2
6
D
2
5
D
1
8
N-Channel MOSFET
G
1
D
1
S
1
N-Channel MOSFET
G
2
D
2
S
2
ORDERING INFORMATION
Package SO-8
Lead (Pb)-free and Halogen-free SQ4946AEY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
7
A
T
C
= 125 °C 4
Continuous Source Current (Diode Conduction)
a
I
S
3.6
Pulsed Drain Current
b
I
DM
28
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
18
Single Pulse Avalanche Energy E
AS
16.2 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
4
W
T
C
= 125 °C 1.3
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
110
°C/W
Junction-to-Foot (Drain) R
thJF
34
SQ4946AEY
www.vishay.com
Vishay Siliconix
S15-1462-Rev. F, 15-Jun-15
2
Document Number: 71506
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 60 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.5 2.0 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 60 V - - 1
μA V
GS
= 0 V V
DS
= 60 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 60 V, T
J
= 175 °C - - 150
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
≥ 5 V 20 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 4.5 A - 0.033 0.040
Ω
V
GS
= 10 V I
D
= 4.5 A, T
J
= 125 °C - - 0.066
V
GS
= 10 V I
D
= 4.5 A, T
J
= 175 °C - - 0.081
V
GS
= 4.5 V I
D
= 4 A - 0.045 0.055
Forward Transconductance
f
g
fs
V
DS
= 15 V, I
D
= 4.5 A - 15 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 600 750
pF Output Capacitance C
oss
- 110 140
Reverse Transfer Capacitance C
rss
-5062
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 30 V, I
D
= 5.3 A
-11.718
nC Gate-Source Charge
c
Q
gs
-1.82.7
Gate-Drain Charge
c
Q
gd
-2.84.2
Gate Resistance R
g
f = 1 MHz 1.3 - 6 Ω
Turn-On Delay Time
c
t
d(on)
V
DD
= 30 V, R
L
= 6.8 Ω
I
D
≅ 4.4 A, V
GEN
= 10 V, R
g
= 1 Ω
-711
ns
Rise Time
c
t
r
-3.35
Turn-Off Delay Time
c
t
d(off)
- 22.4 33.5
Fall Time
c
t
f
-2.13.2
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
--28A
Forward Voltage V
SD
I
F
= 2 A, V
GS
= 0 V - 0.75 1.1 V
SQ4946AEY
www.vishay.com
Vishay Siliconix
S15-1462-Rev. F, 15-Jun-15
3
Document Number: 71506
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
6
12
18
24
30
0246810
V
GS
= 10 V thru 5 V
V
GS
=4V
V
GS
=3V
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
0
5
10
15
20
25
0 3 6 9 12 15
I
D
- Drain Current (A)
- Transconductance (S)
g
fs
T
C
= 125 °C
T
C
= 25 °C
T
C
= -55 °C
C
rss
0
200
400
600
800
1000
0 102030405060
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
6
12
18
24
30
012345
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
0
0.02
0.04
0.06
0.08
0.10
0 6 12 18 24 30
V
GS
=10V
V
GS
=4.5V
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
P1-P3P4-P6P7-P9P10-P10

VS-10ETF04PBF

Mfr. #:
Buy VS-10ETF04PBF
Manufacturer:
Vishay
Description:
Rectifiers 400 Volt 10 Amp
Lifecycle:
New from this manufacturer.
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