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STGW50NC60W

P1-P3P4-P6P7-P9P10-P12P13-P14
August 2007 Rev 1 1/14
14
STGW50NC60W
N-channel 600V - 55A - TO-247
Ultra fast switching PowerMESH™ IGBT
www.st.com
Features
■ Very high frequency operation
■ Low C
RES
/ C
IES
ratio (no cross-conduction
susceptibility)
Applications
■ Very high frequency inverters, UPS
■ HF, SMPS and PFC in both hard switch and
resonant topologies
■ Motor drivers
■ Welding
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “W” identifies a family
optimized for very high frequency applications.
Figure 1. Internal schematic diagram
Type
V
CES
V
CE(sat)
(max)@25°C
I
C
@100°C
STGW50NC60W 600V < 2.6V 55A
TO-247
1
2
3
Table 1. Device summary
Order code Marking Package Packaging
STGW50NC60W GW50NC60W TO-247 Tube
Obsolete Product(s) - Obsolete Product(s)
Contents STGW50NC60W
2/14
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Obsolete Product(s) - Obsolete Product(s)
STGW50NC60W Electrical ratings
3/14
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GS
= 0)
600 V
I
C
(1)
1. Calculated according to the iterative formula:
Collector current (continuous) at T
C
= 25°C 100 A
I
C
(1)
Collector current (continuous) at T
C
= 100°C 55 A
I
CL
(2)
2. V
clamp
= 480V, T
J
=150°C, R
G
=10Ω, V
GE
=15V
Turn-off SOA minimum current 250 A
V
GE
Gate-emitter voltage ±20 V
P
TOT
Total dissipation at T
C
= 25°C
285 W
T
j
Operating junction temperature -55 to 150 °C
Table 2. Thermal resistance
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max IGBT 0.45 °C/W
Rthj-amb Thermal resistance junction-ambient max 50 °C/W
I
C
T
C
()
T
JMAX
T
C
–
R
THJ C–
V
CESAT MAX()
T
C
I
C
,()×
------------------------------------------------------------------------------------------------------=
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9P10-P12P13-P14

STGW50NC60W

Mfr. #:
Buy STGW50NC60W
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors Ultra fast series
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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