OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

FF400R33KF2CNOSA1

P1-P3P4-P6P7-P8
1
TechnischeInformation/TechnicalInformation
FF400R33KF2C
IGBT-Module
IGBT-modules
preparedby:SB
approvedby:DTS
dateofpublication:2013-10-03
revision:2.1
VorläufigeDaten
PreliminaryDataIGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
T
vj
= 25°C
T
vj
= -25°C
V
CES
3300
3300
V
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
I
C nom
I
C
400
660
A
A
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
t
P
= 1 ms I
CRM
800 A
Gesamt-Verlustleistung
Totalpowerdissipation
T
C
= 25°C, T
vj max
= 150 P
tot
4,80 kW
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
V
GES
+/-20 V
CharakteristischeWerte/CharacteristicValues
min. typ. max.
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
I
C
= 400 A, V
GE
= 15 V
I
C
= 400 A, V
GE
= 15 V
V
CE sat
3,40
4,30
4,25
5,00
V
V
T
vj
= 25°C
T
vj
= 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
I
C
= 40,0 mA, V
CE
= V
GE
, T
vj
= 25°C V
GEth
4,2 5,1 6,0 V
Gateladung
Gatecharge
V
GE
= -15 V ... +15 V, V
CE
= 1800V Q
G
8,00 µC
InternerGatewiderstand
Internalgateresistor
T
vj
= 25°C R
Gint
1,3 Ω
Eingangskapazität
Inputcapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
ies
50,0 nF
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
res
2,70 nF
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
V
CE
= 3300 V, V
GE
= 0 V, T
vj
= 25°C I
CES
5,0 mA
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C I
GES
400 nA
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
I
C
= 400 A, V
CE
= 1800 V
V
GE
= ±15 V
R
Gon
= 2,7 Ω, C
GE
= 68,0 nF
t
d on
0,28
0,28
µs
µs
T
vj
= 25°C
T
vj
= 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
I
C
= 400 A, V
CE
= 1800 V
V
GE
= ±15 V
R
Gon
= 2,7 Ω, C
GE
= 68,0 nF
t
r
0,18
0,20
µs
µs
T
vj
= 25°C
T
vj
= 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
I
C
= 400 A, V
CE
= 1800 V
V
GE
= ±15 V
R
Goff
= 3,6 Ω, C
GE
= 68,0 nF
t
d off
1,55
1,70
µs
µs
T
vj
= 25°C
T
vj
= 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
I
C
= 400 A, V
CE
= 1800 V
V
GE
= ±15 V
R
Goff
= 3,6 Ω, C
GE
= 68,0 nF
t
f
0,20
0,20
µs
µs
T
vj
= 25°C
T
vj
= 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
I
C
= 400 A, V
CE
= 1800 V, L
S
= 60 nH
V
GE
= ±15 V
R
Gon
= 2,7 Ω, C
GE
= 68,0 nF
E
on
470
730
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
I
C
= 400 A, V
CE
= 1800 V, L
S
= 60 nH
V
GE
= ±15 V
R
Goff
= 3,6 Ω, C
GE
= 68,0 nF
E
off
430
510
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
Kurzschlußverhalten
SCdata
V
GE
≤ 15 V, V
CC
= 2500 V
V
CEmax
= V
CES
-L
sCE
·di/dt
I
SC
2000
A
T
vj
= 125°C
t
P
≤ 10 µs,
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT R
thJC
26,0 K/kW
Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink
proIGBT/perIGBT
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
R
thCH
18,0 K/kW
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
T
vj op
-40 125 °C
2
TechnischeInformation/TechnicalInformation
FF400R33KF2C
IGBT-Module
IGBT-modules
preparedby:SB
approvedby:DTS
dateofpublication:2013-10-03
revision:2.1
VorläufigeDaten
PreliminaryData
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
T
vj
= 25°C
T
vj
= -25°C
V
RRM
3300
3300
V
Dauergleichstrom
ContinuousDCforwardcurrent
I
F
400 A
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
t
P
= 1 ms I
FRM
800 A
Grenzlastintegral
I²t-value
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C I²t 55,5 kA²s
Spitzenverlustleistung
Maximumpowerdissipation
T
vj
= 125°C P
RQM
800 kW
Mindesteinschaltdauer
Minimumturn-ontime
t
on min
10,0 µs
CharakteristischeWerte/CharacteristicValues
min. typ. max.
Durchlassspannung
Forwardvoltage
I
F
= 400 A, V
GE
= 0 V
I
F
= 400 A, V
GE
= 0 V
V
F
2,80
2,80
3,50
3,50
V
V
T
vj
= 25°C
T
vj
= 125°C
Rückstromspitze
Peakreverserecoverycurrent
I
F
= 400 A, - di
F
/dt = 2200 A/µs (T
vj
=125°C)
V
R
= 1800 V
V
GE
= -15 V
I
RM
550
650
A
A
T
vj
= 25°C
T
vj
= 125°C
Sperrverzögerungsladung
Recoveredcharge
I
F
= 400 A, - di
F
/dt = 2200 A/µs (T
vj
=125°C)
V
R
= 1800 V
V
GE
= -15 V
Q
r
235
440
µC
µC
T
vj
= 25°C
T
vj
= 125°C
AbschaltenergieproPuls
Reverserecoveryenergy
I
F
= 400 A, - di
F
/dt = 2200 A/µs (T
vj
=125°C)
V
R
= 1800 V
V
GE
= -15 V
E
rec
245
515
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode R
thJC
51,0 K/kW
Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink
proDiode/perdiode
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
R
thCH
36,0 K/kW
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
T
vj op
-40 125 °C
3
TechnischeInformation/TechnicalInformation
FF400R33KF2C
IGBT-Module
IGBT-modules
preparedby:SB
approvedby:DTS
dateofpublication:2013-10-03
revision:2.1
VorläufigeDaten
PreliminaryData
Modul/Module
Isolations-Prüfspannung
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min. V
ISOL
6,0 kV
Teilentladungs-Aussetzspannung
Partialdischargeextinctionvoltage
RMS, f = 50 Hz, Q
PD
≤ 10 pC (acc. to IEC 1287) V
ISOL
2,6 kV
Kollektor-Emitter-Gleichsperrspannung
DCstability
T
vj
= 25°C, 100 fit V
CE D
1800 V
MaterialModulgrundplatte
Materialofmodulebaseplate
AlSiC
InnereIsolation
Internalisolation
Basisisolierung(Schutzklasse1,EN61140)
basicinsulation(class1,IEC61140)
AlN
Kriechstrecke
Creepagedistance
Kontakt-Kühlkörper/terminaltoheatsink
Kontakt-Kontakt/terminaltoterminal
32,2
32,2
mm
Luftstrecke
Clearance
Kontakt-Kühlkörper/terminaltoheatsink
Kontakt-Kontakt/terminaltoterminal
19,1
19,1
mm
VergleichszahlderKriechwegbildung
Comperativetrackingindex
CTI > 400
min. typ. max.
Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink
proModul/permodule
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
R
thCH
6,00 K/kW
Modulstreuinduktivität
Strayinductancemodule
L
sCE
25 nH
Modulleitungswiderstand,Anschlüsse-
Chip
Moduleleadresistance,terminals-chip
T
C
=25°C,proSchalter/perswitch R
CC'+EE'
0,37 mΩ
Lagertemperatur
Storagetemperature
T
stg
-40 125 °C
Anzugsdrehmomentf.Modulmontage
Mountingtorqueformodulmounting
SchraubeM6-Montagegem.gültigerApplikationsschrift
ScrewM6-Mountingaccordingtovalidapplicationnote
M 4,25 - 5,75 Nm
Anzugsdrehmomentf.elektr.Anschlüsse
Terminalconnectiontorque
SchraubeM4-Montagegem.gültigerApplikationsschrift
ScrewM4-Mountingaccordingtovalidapplicationnote
SchraubeM8-Montagegem.gültigerApplikationsschrift
ScrewM8-Mountingaccordingtovalidapplicationnote
M
1,8
8,0
-
-
2,1
10
Nm
Nm
Gewicht
Weight
G 1100 g
P1-P3P4-P6P7-P8

FF400R33KF2CNOSA1

Mfr. #:
Buy FF400R33KF2CNOSA1
Manufacturer:
Infineon Technologies
Description:
IGBT MODULE VCES 650V 400A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet