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NTLGF3501NT1G

P1-P3P4-P6P7-P8
NTLGF3501N
http://onsemi.com
4
TYPICAL N−CHANNEL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
2 V
100°C
0
4
2
3
2.41.20.8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
2
1
0
0.4
Figure 1. On−Region Characteristics
4
21.5 2.5
3
2
1
1
0
3
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−50 0−25 25
1
0.6
50 125100
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
T
J
= −55°C
75 150
I
D
= 3.4 A
V
GS
= 4.5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
25°C
1.8
2.2 V
5
1
2
0
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 150°C
1.6 V
1.8 V
10
1000
2.8
V
DS
≥ 10 V
10 15
V
GS
= 2.4 V to 10 V
5
77
5
43.5
0.1
23
0.2
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
I
D,
DRAIN CURRENT (AMPS)
1
I
D
= 3.4 A
T
J
= 25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
54
1.5 2.5 4
.5
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 2.5 V
0.06
0.12
0.04
0.08
6
0.1
100
T
J
= 100°C
3.5
1.6
1.4
1.2
0.8
6
3.2 3.6 4
6
NTLGF3501N
http://onsemi.com
5
V
DS
= 0 V
V
GS
= 0 V
510
400
100
0
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
C, CAPACITANCE (pF)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
T
J
= 25°C
C
OSS
C
ISS
C
RSS
R
G
, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
t, TIME (ns)
10 0
V
GS
V
DS
15
1.0
1
0.1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
10
0.90.60.4
TYPICAL N−CHANNEL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
0
2
4
6
012
0
2
4
6
8
12
V
GS
V
GS,
GATE−TO−SOURCE VOLTAGE (V)
I
D
= 3.4 A
T
J
= 25°C
V
DS,
DRAIN−TO−SOURCE VOLTAGE (V)
Q
GD
V
DS
Q
T
Q
g
, TOTAL GATE CHARGE (nC)
1
10
100
1 10 100
V
DS
= 16 V
I
D
= 3.4 A
V
GS
= 4.5 V
t
d(off)
t
d(on)
t
f
t
r
300
Q
GS
5
200
10
0.5 0.7 0.8
T
J
= 25°C
T
J
= −55°C
T
J
= 150°C
T
J
= 100°C
Figure 11. FET Thermal Response
0.1
0.01
0.02
0.05
0.2
Single Pulse
D = 0.5
t, TIME (s)
0.000001 0.00001 0.001 0.01 1 100 1000
1
0.1
0.001
R
thja(t),
EFFECTIVE TRANSIENT THERMAL RESPONSE
0.01
0.0001 0.1 10
NTLGF3501N
http://onsemi.com
6
TYPICAL SCHOTTKY PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
10
0.10
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
1
0.1
Figure 12. Typical Forward Voltage Figure 13. Maximum Forward Voltage
10
1E−3
100E−6
10E−6
Figure 14. Typical Reverse Current
V
R
, REVERSE VOLTAGE (VOLTS)
I
R,
REVERSE CURRENT (AMPS)
Figure 15. Maximum Reverse Current
25
3
2
2.5
1
0
65 125105
Figure 16. Current Derating
T
L
, LEAD TEMPERATURE (°C)
T
J
= 100°C
1E+0
T
J
= 25°C
85
freq = 20 kHz
I
O,
AVERAGE FORWARD CURRENT (AMPS)
3.5
20
01
0
3.
5
3
Figure 17. Forward Power Dissipation
I
O
, AVERAGE FORWARD CURRENT (AMPS)
2
P
FO
, AVERAGE POWER DISSIPATION (WATTS)
0.2
1.8
0.30
0.5 1.5 2.5
0.50
0
T
J
= 25°C
T
J
= −40°C
10
0.10
V
F
, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
1
0.1
T
J
= 125°C
0.30 0.50
T
J
= 100°C
10E−3
T
J
= 100°C
T
J
= 125°C
10
V
R
, REVERSE VOLTAGE (VOLTS)
2
0
0
I
R,
MAXIMUM REVERSE CURRENT (AMPS)
1.5
0.5
45 145
Ipk/Io = 20
Ipk/Io = 10
Ipk/Io = 5
Ipk/Io = p
square wave
dc
1
1.6
0.4
0.6
0.8
Ipk/Io = 20
Ipk/Io = 10
Ipk/Io = 5
Ipk/Io = p
dc
1.4
1.2
100E−3
10E−3
1E−3
100E−6
10E+0
T
J
= 25°C
100E−3
T
J
= 100°C
T
J
= 125°C
1E+0
T
J
= 125°C
T
J
= 25°C
square wave
P1-P3P4-P6P7-P8

NTLGF3501NT1G

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Buy NTLGF3501NT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 20V 2.8A 6-DFN
Lifecycle:
New from this manufacturer.
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