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S25KR

P1-P2
V
RRM
= 50 V - 1200 V
I
F
= 25 A
Features
• High Surge Capability DO-4 Package
• Types up to 1200 V V
RRM
Parameter Symbol Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
V
S25K thru S25QR
Conditions S25K (R) S25M (R) S25Q (R)
1000
Silicon Standard
Recover
y
Diode
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
800 1200
pp g
RMS reverse voltage
V
RMS
V
DC blocking voltage
V
DC
V
Continuous forward current
I
F
A
Operating temperature
T
j
°C
Storage temperature
T
stg
°C
Parameter Symbol Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
°C/W
V
R
= 50 V, T
j
= 25 °C
I
F
= 25 A, T
j
= 25 °C
Reverse current
I
R
V
F
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
A
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 120 °C
Conditions
700560
2.50 2.50
V
R
= 50 V, T
j
= 175 °C
12 12 12
1000800
10
S25Q (R)
1.1
10 10
-65 to 175 -65 to 175
-65 to 200 -65 to 200 -65 to 200
S25K (R) S25M (R)
2.50
25 25 25
373 373 373
840
1200
1.1 1.1
-65 to 175
www.genesicsemi.com
1
S25K thru S25QR
www.genesicsemi.com
2
P1-P2

S25KR

Mfr. #:
Buy S25KR
Manufacturer:
GeneSiC Semiconductor
Description:
Rectifiers 800V 25A REV Leads Std. Recovery
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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