MIXA20WB1200TML Datasheet MIXA20WB1200TML | P4-P6

4 - 8

20101103c

MIXA20WB1200TML

IXYS reserves the right to change limits, test conditions and dimensions.

Input Rectiﬁer Bridge D8 - D11

Ratings

Symbol Deﬁnitions Conditions min. typ. max. Unit

V

RRM

max. repetitive reverse voltage

T

VJ

= 25°C 1600 V

I

FAV

I

DAVM

average forward current

max. average DC output current

sine 180° T

C

= 80°C

rect.; d =

1

/

3

T

C

= 80°C

37

105

A

I

FSM

max. forward surge current

t = 10 ms; sine 50 Hz T

VJ

= 25°C

T

VJ

= 125°C

320

280

A

I

2

t

I

2

t value for fusing

t = 10 ms; sine 50 Hz T

VJ

= 25°C

T

VJ

= 125°C

510

390

A

2

s

A

2

s

P

tot

total power dissipation

T

C

= 25°C 110 W

V

F

forward voltage

I

F

= 50 A T

VJ

= 25°C

T

VJ

= 125°C

1.36

1.7 V

V

I

R

reverse current

V

R

= V

RRM

T

VJ

= 25°C

T

VJ

= 125°C 0.2

0.02 mA

mA

R

thJC

R

thCH

thermal resistance junction to case

thermal resistance case to heatsink

(per diode)

(per diode) 0.36

1.1 K/W

K/W

Temperature Sensor NTC

Ratings

Symbol Deﬁnitions Conditions min. typ. max. Unit

R

25

B

25/50

resistance

T

C

= 25°C 4.45 4.7

3510

5.0 kW

K

Module

Ratings

Symbol Deﬁnitions Conditions min. typ. max. Unit

T

VJ

T

VJM

T

stg

operating temperature

max. virtual junction temperature

storage temperature

-40

125

150

125

°C

V

ISOL

isolation voltage

I

ISOL

< 1 mA; 50/60 Hz 2500 V~

CTI

comparative tracking index

-

M

d

mounting torque

(M4) 2.0 2.2 Nm

d

S

d

A

creep distance on surface

strike distance through air

12.7

7.6

mm

Weight

40 g

Equivalent Circuits for Simulation

Ratings

Symbol Deﬁnitions Conditions min. typ. max. Unit

V

0

R

0

rectiﬁer diode

D8 - D13 T

VJ

= 150°C 0.88

9.0

V

mW

V

0

R

0

IGBT

T1 - T6 T

VJ

= 150°C 1.1

86.3

V

mW

V

0

R

0

free wheeling diode

D1 - D6 T

VJ

= 150°C 1.19

40.0

V

mW

V

0

R

0

IGBT T7 T

VJ

= 150°C 1.1

153

V

mW

V

0

R

0

free wheeling diode D7 T

VJ

= 150°C 1.19

40

V

mW

I

V

0

R

0

T

C

= 25°C unless otherwise stated

5 - 8

20101103c

MIXA20WB1200TML

IXYS reserves the right to change limits, test conditions and dimensions.

Part number

M = Module

I = IGBT

X = XPT

A = standard

20 = Current Rating [A]

WB = 6-Pack + 3~ Rectiﬁer Bridge & Brake Unit

1200 = Reverse Voltage [V]

T = NTC

ML = E1-Pack

Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code

Standard MIXA 20 WB 1200 TML MIXA20WB1200TML Box 10 508630

Circuit Diagram

Outline Drawing Dimensions in mm (1 mm = 0.0394“)

6 - 8

20101103c

MIXA20WB1200TML

IXYS reserves the right to change limits, test conditions and dimensions.

0 1 2 3

0

5

10

15

20

25

30

0 5 10 15 20 25 30 35

0

1

2

3

4

0 1 2 3 4 5

0

5

10

15

20

25

30

V

CE

[V]

I

C

[A]

Q

G

[nC]

V

GE

[V]

9 V

11 V

5 6 7 8 9 10 11 12 13

0

5

10

15

20

25

30

0 10 20 30 40 50 60

0

5

10

15

20

13 V

40 60 80 100 120 140 160

1.2

1.6

2.0

2.4

2.8

E

[mJ]

E

on

Fig. 1 Typ. output characteristics

V

CE

[V]

I

C

[A]

V

GE

= 15 V

17 V

19 V

Fig. 2 Typ. output characteristics

I

C

[A]

Fig. 3 Typ. tranfer characteristics

V

GE

[V]

Fig. 4 Typ. turn-on gate charge

Fig. 5 Typ. switching energy vs. collector current

E

off

Fig. 6 Typ. switching energy vs. gate resistance

R

G

[Ω]

E

[mJ]

I

C

[A]

R

G

= 56 Ω

V

CE

= 600 V

V

GE

= ±15 V

T

VJ

= 125°C

E

on

E

off

I

C

= 15 A

V

CE

= 600 V

V

GE

= ±15 V

T

VJ

= 125°C

I

C

= 15 A

V

CE

= 600 V

T

VJ

= 125°C

T

VJ

= 25°C

V

GE

= 15 V

T

VJ

= 125°C

T

VJ

= 125°C

T

VJ

= 25°C

IGBT T1 - T6

MIXA20WB1200TML

MIXA20WB1200TML

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