Characteristics STPS15L30CDJF
2/7 Doc ID 15664 Rev 4
1 Characteristics
When diodes 1 and 2 are used simultaneously:
Δ T
j
(diode 1) = P(diode1) x R
th(j-c)
(per diode) + P(diode 2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 0.27 x I
F(AV)
+ 0.016 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 30 V
I
F(RMS)
Forward rms current 10 A
I
F(AV)
Average forward current δ = 0.5 T
c
= 140 °C
Per diode 7.5
A
Per device 15
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 75 A
I
RRM
Peak repetitive reverse current t
p
= 2 µs square F= 1 kHz 1 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 2800 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
150 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode 2.5
°C/WTotal 1.6
R
th(c)
Coupling 0.7
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 380 µs, δ < 2%
Reverse leakage
current
T
j
= 25 °C
V
R
= V
RRM
--1mA
T
j
= 125 °C - 70 140 mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C I
F
= 7.5 A - - 0.48
V
T
j
= 125 °C I
F
= 7.5 A - 0.34 0.39
T
j
= 25 °C I
F
= 15 A - - 0.57
T
j
= 125 °C I
F
= 15 A - 0.44 0.51
dPtot
dTj
<
1
Rth(j-a)
