Product Standards
Transistors with Built-in Resistor
DRC3124T0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Page
22 +30%
k
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Between emitter base resistance
R1 -30%
V
1.8 V
0.25 V
0.4
Input voltage
Vi(on) VCE = 0.2 V, IC = 5 mA
Vi(off) VCE = 5 V, IC = 100 μA
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.5 mA
0.01 VEB = 6 V, IC = 0 mA
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA 160 460 -
Emitter-base cutoff current (Collector open)
IEBO
0.1 μA
Collector-emitter cutoff current (Base open)
ICEO VCE = 50 V, IB = 0 0.5 μA
Collector-base cutoff current (Emitter open)
ICBO VCB = 50 V, IE = 0
50 V
Parameter
Collector-emitter voltage (Base open)
VCEO IC = 2 mA, IB = 0
°C
Max Unit
Collector-base voltage (Emitter open)
VCBO IC = 10 μA, IE = 0 50 V
Tstg -55 to +150
Junction temperature Tj 150
Storage temperature
Total power dissipation PT
100
mW
Collector current IC
100
mA
Collector-emitter voltage (Base open) VCEO
50
V
Collector-base voltage (Emitter open) VCBO
50
V
Internal Connection
Resistance
value
R1
22
k
1of3
Conditions
°C
Unit: mm
Min Typ
Collector
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE with excellent linearity
DRC3124T0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA3124T
DRC9124T in SSSMini3 type package
Features
Marking Symbol:
NH
SOT-723
Panasonic
Packaging
SSSMini3-F2-B
JEITA
Embossed type (Thermo-compression sealing) : 10
SC-105AA
Parameter Symbol Rating Unit
1.
2.
3.
Code
Base
Emitter
000 pcs / reel (standard)
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
+85 °COperating ambient temperature Topr -40 to
Symbol
C
B
R
1
E
1.2
1.2
0.52
0.8
0.2
0.8
0.3
(0.4)
0.13
12
3
(0.4)
