2
www.fairchildsemi.com
RMPA0965 Rev. F
RMPA0965 Cellular CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module
Absolute Ratings
1
Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics
1
Notes:
1. All parameters met at Tc = +25°C, Vcc = +3.4V, Freq = 836.5MHz, Vref = 2.85V and load VSWR
≤
1.2:1, unless
otherwise noted.
2. All phase angles.
3. Guaranteed by design.
Symbol Parameter Value Units
Vcc1, Vcc2 Supply Voltages 5.0 V
Vref Reference Voltage 2.6 to 3.5 V
Vmode Power Control Voltage 3.5 V
Pin RF Input Power +10 dBm
T
STG
Storage Temperature -55 to +150 °C
Symbol Parameter Min Typ Max Units Comments
fOperating Frequency 824 849 MHz
CDMA Operation
SSg Small-Signal Gain 29 dB Po = 0dBm
Gp Power Gain 30
29
dB
dB
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode
≥
2.0V
Po Linear Output Power 28
16
dBm
dBm
Vmode = 0V
Vmode
≥
2.0V
PAEd PAEd (digital) @ +28dBm 40 % Vmode = 0V
PAEd (digital) @ +16dBm 9 % Vmode
≥
2.0V
PAEd (digital) @ +16dBm 25 % Vmode
≥
2.0V, Vcc = 1.4V
Itot High Power Total Current 470 mA Po = +28dBm, Vmode = 0V
Low Power Total Current 130 mA Po = +16dBm, Vmode
≥
2.0V
Adjacent Channel Power Ratio IS-95 A/B Modulation
ACPR1 ±885KHz Offset -50
-52
dBc
dBc
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode
≥
2.0V
ACPR2 ±1.98MHz Offset -60
-70
dBc
dBc
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode
≥
2.0V
AMPS Operation
Gp Gain 30 dB Po = +31dBm
PAEa Power-Added Efficiency (analog) 52 % Po = +31dBm
General Characteristics
VSWR Input Impedance 2.0:1 2.5:1
NF Noise Figure 4 dB
Rx No Receive Band Noise Power -137 dBm/Hz Po
≤
+28dBm; 869 to 894MHz
2fo-5fo Harmonic Suppression
3
-30 dBc Po
≤
+28dBm
SSpurious Outputs
2, 3
-60 dBc Load VSWR
≤
5.0:1
Ruggedness w/ Load Mismatch
3
10:1 No permanent damage.
Tc Case Operating Temperature -30 85 °C
DC Characteristics
Iccq Quiescent Current 60 mA Vmode
≥
2.0V
Iref Reference Current 5 8 mA Po
≤
+28dBm
Icc(off) Shutdown Leakage Current
15µA No applied RF signal.