APT30M19JVR Datasheet APT30M19JVR | P1-P3

G

D

S

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250µA)

On State Drain Current

2

(V

DS

> I

D(on)

x R

DS(on)

Max, V

GS

= 10V)

Drain-Source On-State Resistance

2

(V

GS

= 10V, 0.5 I

D[Cont.]

)

Zero Gate Voltage Drain Current (V

DS

= V

DSS

, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 0.8 V

DSS

, V

GS

= 0V, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 5.0mA)

050-5585 Rev B

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J

,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

C

= 25°C

Pulsed Drain Current

1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

C

= 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

1

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Amps

Ohms

µA

nA

Volts

MIN TYP MAX

300

130

0.019

100

500

±100

24

APT30M19JVR

300

130

520

±30

±40

700

5.6

-55 to 150

300

130

50

3600

APT30M19JVR

300V 130A 0.019Ω

SOT-227

G

S

D

ISOTOP

®

"UL Recognized"

Power MOS V

®

is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • Popular SOT-227 Package

POWER MOS V

®

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61

APT Website - http://www.advancedpower.com

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

DYNAMIC CHARACTERISTICS

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= 0.5 I

D[Cont.]

@ 25°C

V

GS

= 15V

V

DD

= 0.5 V

DSS

I

D

= I

D[Cont.]

@ 25°C

R

G

= 0.6Ω

MIN TYP MAX

18000 21600

3250 4550

980 1470

650 975

115 175

290 435

22 44

33 66

70 135

10 20

UNIT

pF

nC

ns

APT30M19JVR

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

3

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

050-5585 Rev B

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current

1

(Body Diode)

Diode Forward Voltage

2

(V

GS

= 0V, I

S

= -I

D[Cont.]

)

Reverse Recovery Time (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/µs)

Reverse Recovery Charge (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/µs)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

UNIT

Amps

Volts

ns

µC

MIN TYP MAX

130

520

1.3

620

14

Z

θ

JC

, THERMAL IMPEDANCE (°C/W)

10

-5

10

-4

10

-3

10

-2

10

-1

1.0 10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.2

0.1

0.05

0.01

0.005

0.001

0.0005

Note:

Duty Factor D =

t

1

/

t

2

Peak T

J

= P

DM

x Z

θJC

+ T

C

t

1

t

2

P

DM

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

1

Repetitive Rating: Pulse width limited by maximum junction

3

See MIL-STD-750 Method 3471

temperature.

4

Starting T

j

=

+25°C, L = 426µH, R

G

=

25Ω, Peak I

L

= 130A

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL/PACKAGE CHARACTERISTICS

Symbol

R

θJC

R

θJA

V

Isolation

Torque

MIN TYP MAX

0.18

40

2500

13

UNIT

°C/W

Volts

lb•in

Characteristic

Junction to Case

Junction to Ambient

RMS Voltage

(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)

Maximum Torque for Device Mounting Screws and Electrical Terminations.

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

D

, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

DS

(ON) vs DRAIN CURRENT

T

C

, CASE TEMPERATURE (°C) T

J

, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

T

J

, JUNCTION TEMPERATURE (°C) T

C

, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES) I

D

, DRAIN CURRENT (AMPERES) I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

V

GS

(TH), THRESHOLD VOLTAGE BV

DSS

, DRAIN-TO-SOURCE BREAKDOWN R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED) VOLTAGE (NORMALIZED)

APT30M19JVR

050-5585 Rev B

0 25 50 75 100 125 150 0 1 2 3 4 5

02468 050100150200250300

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

I

D

= 0.5 I

D

[Cont.]

V

GS

= 10V

360

300

240

180

120

60

0

1.15

1.10

1.05

1.00

0.95

0.90

1.20

1.15

1.10

1.05

1.00

0.95

0.90

1.2

1.1

1.0

0.9

0.8

0.7

0.6

360

300

240

180

120

60

0

360

300

240

180

120

60

0

150

125

100

75

50

25

0

2.5

2.0

1.5

1.0

0.5

0.0

V

DS

> I

D

(ON) x R

DS

(ON)MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

V

GS

=10V

V

GS

=20V

V

GS

=8V, 9V, 10V & 15V

6V

7V

5.5V

4.5V

5V

6V

5.5V

4.5V

5V

6.5V

V

GS

=15V

6.5V

10V

9V

T

J

= +25°C

T

J

= -55°C

T

J

= +125°C

T

J

= +125°C

T

J

= +25°C

T

J

= -55°C

NORMALIZED TO

V

GS

= 10V @ 0.5 I

D

[Cont.]

8V

7V

APT30M19JVR

APT30M19JVR

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