OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SI5475DDC-T1-GE3

P1-P3P4-P6P7-P9P10-P11
Si5475DDC
www.vishay.com
Vishay Siliconix
S17-0618-Rev. C, 01-May-17
4
Document Number: 68750
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Forward Diode Voltage vs. Temperature
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
Safe Operating Area, Junction-to-Ambient
0.0 0.2 0.4 0.6 0.8 1.0 1.2
10
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
100
T
J
= 150 °C
T
J
=25 °C
0.2
0.3
0.4
0.5
0.6
0.7
0.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
0.00
0.02
0.04
0.06
0.08
0.10
012345
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
=25 °C
T
J
= 125 °C
I
D
=5.4A
0
30
50
10
20
Power (W)
Time (s)
40
1 100 6001010
-1
10
-2
10
-3
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
T
A
=25 °C
Single Pulse
100 ms
10 s
1s
DC
Limited by R
DS(on)
*
BVDSS
Limited
10 ms
1ms
Si5475DDC
www.vishay.com
Vishay Siliconix
S17-0618-Rev. C, 01-May-17
5
Document Number: 68750
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating
a
Power Derating
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0
3
6
9
12
15
0 255075100125150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Package Limited
0
1
2
3
4
5
6
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Si5475DDC
www.vishay.com
Vishay Siliconix
S17-0618-Rev. C, 01-May-17
6
Document Number: 68750
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68750
.
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 80 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
P1-P3P4-P6P7-P9P10-P11

SI5475DDC-T1-GE3

Mfr. #:
Buy SI5475DDC-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -12V Vds 8V Vgs 1206-8 ChipFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet