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AT49BV160DT-70TU

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22
3591A–FLASH–12/05
AT49BV160D(T)
35. AC Word Load Waveforms
35.1 WE Controlled
35.2 CE
Controlled
34. AC Word Load Characteristics
Symbol Parameter Min Max Units
t
AS
, t
OES
Address, OE Setup Time 20 ns
t
AH
Address Hold Time 0 ns
t
CS
Chip Select Setup Time 0 ns
t
CH
Chip Select Hold Time 0 ns
t
WP
Write Pulse Width (WE or CE)25ns
t
WPH
Write Pulse Width High 15 ns
t
DS
Data Setup Time 25 ns
t
DH
, t
OEH
Data, OE Hold Time 0 ns
23
3591A–FLASH–12/05
AT49BV160D(T)
37. Program Cycle Waveforms
38. Sector Erase Cycle Waveforms
Notes: 1. Any address can be used to load the data.
2. OE
must be high only when WE and CE are both low.
3. The data can be 40H or 10H.
4. The address depends on what sector is to be erased.
36. Program Cycle Characteristics
Symbol Parameter Min Typ Max Units
t
BP
Word Programming Time 10 120 µs
t
BPD
Word Programming Time in Dual Programming Mode 5 60 µs
t
AS
Address Setup Time 20 ns
t
AH
Address Hold Time 0 ns
t
DS
Data Setup Time 25 ns
t
DH
Data Hold Time 0 ns
t
WP
Write Pulse Width 25 ns
t
WPH
Write Pulse Width High 15 ns
t
WC
Write Cycle Time 70 ns
t
RP
Reset Pulse Width 500 ns
t
SEC1
Sector Erase Cycle Time (4K Word Sectors) 0.1 2.0 seconds
t
SEC2
Sector Erase Cycle Time (32K Word Sectors) 0.5 6.0 seconds
t
ES
Erase Suspend Time 15 µs
t
PS
Program Suspend Time 10 µs
t
ERES
Delay between Erase Resume and Erase Suspend 500 µs
OE
PROGRAM CYCLE
INPUT DATA
Note 3
ADDRESS
t
BP
t
WP
CE
WE
A0 - A19
DATA
t
WPH
t
AS
t
AH
t
DH
t
DS
t
WC
XX
(1)
OE
(2)
D0
XX
(1)
20
WORD 0
WORD 1
SA
(4)
t
WPH
t
WP
CE
WE
A0-A19
DATA
t
AS
t
AH
t
SEC1/2
t
DH
t
DS
t
WC
24
3591A–FLASH–12/05
AT49BV160D(T)
39. Common Flash Interface Definition Table
Address AT49BV160DT AT49BV160D
10h 0051h 0051h “Q”
11h 0052h 0052h “R”
12h 0059h 0059h “Y”
13h 0003h 0003h
14h 0000h 0000h
15h 0041h 0041h
16h 0000h 0000h
17h 0000h 0000h
18h 0000h 0000h
19h 0000h 0000h
1Ah 0000h 0000h
1Bh 0027h 0027h VCC min write/erase
1Ch 0036h 0036h VCC max write/erase
1Dh 0090h 0090h VPP min voltage
1Eh 00A0h 00A0h VPP max voltage
1Fh 0004h 0004h Typ word write – 10 µs
20h 0002h 0002h Typ dual word program time – 5 µs
21h 0009h 0009h Typ sector erase, 500 ms
22h 0000h 0000h Typ chip erase, not supported
23h 0004h 0004h Max word write/typ time
24h 0004h 0004h Max dual word program time/typ time
25h 0004h 0004h Max sector erase/typ sector erase
26h 0000h 0000h Max chip erase/ typ chip erase
27h 0015h 0015h Device size
28h 0001h 0001h x16 device
29h 0000h 0000h x16 device
2Ah 0002h 0002h Maximum number of bytes in multiple byte write = 4
2Bh 0000h 0000h Maximum number of bytes in multiple byte write = 4
2Ch 0002h 0002h 2 regions, x = 2
2Dh 001Eh 0007h 64K bytes, Y = 30 (Top); 8K bytes, Y = 7 (Bottom)
2Eh 0000h 0000h 64K bytes, Y = 30 (Top); 8K bytes, Y = 7 (Bottom)
2Fh 0000h 0020h 64K bytes, Z = 256 (Top); 8K bytes, Z = 32 (Bottom)
30h 0001h 0000h 64K bytes, Z = 256 (Top); 8K bytes, Z = 32 (Bottom)
31h 0007h 001Eh 8K bytes, Y = 7 (Top); 64K bytes, Y = 30 (Bottom)
32h 0000h 0000h 8K bytes, Y = 7 (Top); 64K bytes, Y = 30 (Bottom)
33h 0020h 0000h 8K bytes, Z = 32 (Top); 64K bytes, Z = 256 (Bottom)
34h 0000h 0001h 8K bytes, Z = 32 (Top); 64K bytes, Z = 256 (Bottom)
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AT49BV160DT-70TU

Mfr. #:
Buy AT49BV160DT-70TU
Manufacturer:
Microchip Technology / Atmel
Description:
NOR Flash 16M 3V ASYNC BTTM BT-70NS TOP BT
Lifecycle:
New from this manufacturer.
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