VS-40EPS08PBF

VS-40EPS..PbF Series, VS-40EPS..-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 12-Oct-16
1
Document Number: 94343
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage, Input Rectifier Diode, 40 A
FEATURES
Very low forward voltage drop
150 °C max. operating junction temperature
Glass passivated pellet chip junction
Designed and qualified according to
JEDEC
®
-JESD 47
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Input rectification
Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
PRODUCT SUMMARY
Package TO-247AC modified (2 pins)
I
F(AV)
40 A
V
R
800 V to 1200 V
V
F
at I
F
1.1 V
I
FSM
475 A
T
J
max. 150 °C
Diode variation Single die
Base
cathode
2
13
Anode
Cathode
1
2
3
TO-247AC modified
Available
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Sinusoidal waveform 40 A
V
RRM
Range 800/1200 V
I
FSM
475 A
V
F
40 A, T
J
= 25 °C 1.1 V
T
J
-40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-40EPS08PbF, VS-40EPS08-M3 800 900
1
VS-40EPS12PbF, VS-40EPS12-M3 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 105 °C, 180° conduction half sine wave 40
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 400
10 ms sine pulse, no voltage reapplied 475
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 800
A
2
s
10 ms sine pulse, no voltage reapplied 1131
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 11 310 A
2
s
VS-40EPS..PbF Series, VS-40EPS..-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 12-Oct-16
2
Document Number: 94343
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
20 A, T
J
= 25 °C 1.0
V
40 A, T
J
= 25 °C 1.1
Forward slope resistance r
t
T
J
= 150 °C
7.16 m
Threshold voltage V
F(TO)
0.74 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.1
mA
T
J
= 150 °C 1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storrage
temperature range
T
J
, T
Stg
-40 to +150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.6
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
40
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased 0.2
Approximate weight
6g
0.21 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AC modified (JEDEC)
40EPS08
40EPS12
95
135
140
145
150
130
125
120
115
110
105
100
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
45403530252015105
0
30°
60°
90°
120°
18
VS-40EPS.. Series
R
thJC
(DC) = 0.6 K/W
Conduction angle
Ø
130
140
150
120
110
100
Maximum Allowable Case
Temperture (°C)
Average Forward Current (A)
2010 30 40 50 60
70
0
DC
30°
60°
90°
120°
18
VS-40EPS.. Series
R
thJC
(DC) = 0.6 K/W
Ø
Conduction period
VS-40EPS..PbF Series, VS-40EPS..-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 12-Oct-16
3
Document Number: 94343
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Forward Voltage Drop Chacteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Thermal Impedance Z
thJC
Characteristics
5
0
10
15
20
25
35
30
40
45
50
55
60
Maximum Average Forward
Power Loss (W)
V
FM
- Forward Voltage Drop (V)
5
40353025201510
0
RMS limit
18
120°
90°
60°
30°
VS-40EPS.. Series
T
J
= 150 °C
Conduction angle
Ø
40
30
50
60
70
80
20
10
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
70605040302010
0
DC
18
120°
90°
60°
30°
RMS limit
VS-40EPS.. Series
T
J
= 150°C
Ø
Conduction period
1
100
10
1000
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0.5 2.0 2.51.51.0
3.0
0
T
J
= 25 °C
T
J
= 150 °C
VS-40EPS.. Series
400
450
500
350
300
250
200
150
100
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (S)
0.1 1.00.01
Maximum non-repetitive surge current
VS-40EPS.. Series
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
versus pulse train duration.
0.01
0.1
1
0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
Z
thJC
- Transient Thermal
Impedance (°C/W)
Steady state value:
(DC operation)
Single pulse
VS-40EPS.. Series
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

VS-40EPS08PBF

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 800 Volt 475 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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