MJD2955 (PNP), MJD3055 (NPN)
http://onsemi.com
4
Figure 6. “On” Voltages, MJD2955
2
0.1
0
0.2 0.3 0.5 1 3 10
0.8
1.6
1.2
V, VOLTAGE (VOLTS)
0.4
5
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 3 V
Figure 7. Switching Time Test Circuit
Figure 8. Thermal Response
t, TIME (ms)
1
0.01
0.02
0.7
0.2
0.1
0.05
0.02
r(t), EFFECTIVE TRANSIENT THERMAL
0.05 1 2 5 10 20 50 100 200 500
R
q
JC(t)
= r(t) R
q
JC
R
q
JC
= 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.1 0.50.2
RESISTANCE (NORMALIZED)
1 k
0.5
0.3
0.07
0.03
0.03 0.3 3 30 300
I
C
, COLLECTOR CURRENT (AMP)
2
+11 V
25 ms
0
-9 V
R
B
-4 V
D
1
SCOPE
V
CC
+30 V
R
C
t
r
, t
f
≤ 10 ns
DUTY CYCLE = 1%
51
D
1
MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE I
B
≈ 100 mA
MSD6100 USED BELOW I
B
≈ 100 mA
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.01
Figure 9. Maximum Forward Bias
Safe Operating Area
0.01
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.02
5
2
1
10
0.5
0.1
T
J
= 150°C
1ms
dc
3
0.3
0.6 1 2 6020 40
I
C
, COLLECTOR CURRENT (AMP)
WIRE BOND LIMIT
THERMAL LIMIT T
C
= 25°C (D = 0.1)
SECOND BREAKDOWN LIMIT
1064
500ms
0.03
0.05
100ms
5ms
Forward Bias Safe Operating Area Information
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
J(pk)
≤ 150_C. T
J(pk)
may be calculated from the data in
Figure 8. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
