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FMMTA64TA

P1-P1
SOT23 PNP SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 2  MARCH 1995 ✪
PARTMARKING DETAIL  FMMTA63 - Z2U
FMMTA64 - Z2V
COMPLEMENTARY TYPES FMMTA63 - FMMTA13
FMMTA64 - FMMTA14
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-30 V
Collector-Emitter Voltage V
CEO
-30 V
Emitter-Base Voltage V
EBO
-10 V
Peak Pulse Current I
CM
-800 mA
Continuous Collector Current I
C
-500 mA
Peak Base Current I
BM
-200 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL FMMTA63 FMMTA64 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-30 -30 V
I
C
=-10µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-30 -30 V I
C
=-10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-10 -10 V
I
E
=-10µA, I
C
=0
Collector Cut-Off
Current
I
CBO
-0.1 -0.1
µA
V
CB
=-30V, I
E
=0
Emitter Cut-Off
Current
I
EBO
-0.1 -0.1
µA
V
CE
=-10V
Static Forward
Current Transfer Ratio
h
FE
5K
10K
10K
20K
I
C
=-10mA, V
CE
=5V*
I
C
=-100mA, V
CE
=5V*
Collector-Emitter
Saturation Voltage
V
CE(sat)
-1.5 -1.5 V I
C
=-100mA, I
B
=-0.1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-2.0 -2.0 V I
C
=-100mA, I
B
=-0.1mA*
Transition
Frequency
f
T
125 125 MHz I
C
=-50mA, V
CE
=-5V
f=20MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
For typical characteristics graphs see FZTA63 datasheet.
FMMTA63
FMMTA64
3 - 178
C
B
E
SOT23
P1-P1

FMMTA64TA

Mfr. #:
Buy FMMTA64TA
Manufacturer:
Diodes Incorporated
Description:
Darlington Transistors PNP Darlington
Lifecycle:
New from this manufacturer.
Delivery:
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