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1N914

P1-P3P4-P4
T4-LDS-0279, Rev. 1 (121565) ©2012 Microsemi Corporation Page 1 of 4
1N914
Available on
commercial
version
Glass Axial Switching Diode
Qualified per MIL-PRF-19500/116
Qualified Levels:
JAN, JANTX, and
JANTXV
DESCRIPTION
This 1N914 JEDEC registered switching/signal diode features internal metallurgical bonded
construction for military grade products per MIL-PRF-19500/116. This small low capacitance
diode, with very fast switching speeds, is hermetically sealed and bonded into a double-plug
DO-35 package. It may be used in a variety of very high speed applications including
switchers, detectors, transient OR'ing, logic arrays, blocking, as well as low-capacitance
steering diodes, etc. Microsemi also offers a variety of other switching/signal diodes.
DO-35 (DO-204AH)
Package
Also available in:
DO-213AA package
(surface mount)
1N914UR
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 1N914 number.
• Hermetically sealed glass construction.
• Metallurgically bonded.
• Double plug construction.
• Very low capacitance.
• Very fast switching speeds with minimal reverse recovery times.
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/116.
(See
part nomenclature for all available options.)
• RoHS compliant version available (commercial grade only).
APPLICATIONS / BENEFITS
• High frequency data lines.
• Small size for high density mounting using flexible thru-hole leads (see package illustration).
• RS-232 & RS–422 interface networks.
• Ethernet 10 base T.
• Low-capacitance steering diodes.
• LAN.
• Computers.
MAXIMUM RATINGS @ 25 ºC unless otherwise stated
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
T
J
& T
STG
-65 to +175
o
C
Thermal Resistance Junction-to-Lead
(1)
R
ӨJL
250
o
C/W
Thermal Resistance Junction-to-Ambient
(2)
R
ӨJA
325
o
C/W
Maximum Breakdown Voltage
V
(
BR)
100
V
Working Peak Reverse Voltage
V
RWM
75
V
Average Rectified Current @ T
A
= 75 ºC
(3)
I
O
200
mA
Non-Repetitive Sinusoidal Surge Current (tp = 8.3 ms)
I
FSM
2
A (pk)
NOTES: 1. Lead length = .375 inch (9.35 mm). See Figure 2 for thermal impedance curves.
2. T
A
= +75°C on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu,
horizontal, in still air; pads for axial = .092 inch (2.34 mm) diameter, strip = .030 inch (0.76 mm) x 1 inch
(25.4 mm) long, lead length L ≤ 0.187 inch (≤ 4.75 mm); R
ӨJA
with a defined PCB thermal resistance
condition included, is measured at I
O
= 200 mA.
3. See
Figure 1 for derating.
T4-LDS-0279, Rev. 1 (121565) ©2012 Microsemi Corporation Page 2 of 4
1N914
MECHANICAL and PACKAGING
• CASE: Hermetically sealed glass package.
• TERMINALS: Tin/lead plated or RoHS compliant matte-tin (commercial grade only) over copper clad steel. Solderable per MIL-
STD-750, method 2026.
• POLARITY: Cathode indicated by band.
• MARKING: Part number.
• TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
• WEIGHT: 0.2 grams.
• See
Package Dimensions on last page.
PART NOMENCLATURE
JAN 1N914 (e3)
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
Blank = Commercial grade
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (on
commercial grade only)
Blank = non-RoHS compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
I
R
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
I
O
Average Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
t
rr
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
V
F
Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum
value).
V
R
Reverse Voltage: The reverse voltage dc value, no alternating component.
V
RWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range
excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV.
ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise noted
FORWARD
VOLTAGE
V
F1
@
I
F
=10 mA
FORWARD
VOLTAGE
V
F2
@
I
F
=50 mA
REVERSE
RECOVERY
TIME
t
rr
(Note 1)
FORWARD
RECOVERY
TIME
t
fr
(Note 2)
REVERSE
CURRENT
I
R1
@ 20 V
REVERSE
CURRENT
I
R2
@ 75 V
REVERSE
CURRENT
I
R3
@ 20 V
T
A
=150
o
C
REVERSE
CURRENT
I
R4
@ 75 V
T
A
=150
o
C
CAPACI-
TANCE
C
(Note 3)
CAPACI-
TANCE
C
(Note 4)
V
V
ns
ns
nA
µA
µA
µA
pF
pF
0.8 1.2 5 20 25 0.5 35 75 4.0 2.8
NOTE 1: I
F
= I
R
= 10 mA, R
L
= 100 Ohms. NOTE 3: V
R
= 0 V, f = 1 MHz, V
SIG
= 50 mV (pk to pk).
NOTE 2: I
F
= 50 mA. NOTE 4: V
R
= 1.5V, f = 1 MHz, V
SIG
= 50 mV (pk to pk).
T4-LDS-0279, Rev. 1 (121565) ©2012 Microsemi Corporation Page 3 of 4
1N914
GRAPHS
T
A
(ºC) (Ambient)
FIGURE 1 – Temperature – Current Derating
Time (s)
FIGURE 2 – Thermal Impedance
DC Operation Maximum Io Rating (mA)
Theta (°C/W)
P1-P3P4-P4

1N914

Mfr. #:
Buy 1N914
Manufacturer:
ON Semiconductor / Fairchild
Description:
Diodes - General Purpose, Power, Switching 100V 4.0ns Diode Single Junction
Lifecycle:
New from this manufacturer.
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