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VEMT3700F-GS08

P1-P3P4-P6
Document Number: 81584 For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
Rev. 1.6, 14-Jul-10 1
Silicon NPN Phototransistor
VEMT3700F
Vishay Semiconductors
DESCRIPTION
VEMT3700F is a high speed silicon NPN epitaxial planar
phototransistor in a miniature PLCC-2 package. The
integrated daylight blocking filter is matched to 950 nm
IR emitters.
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• High radiant sensitivity
• Fast response times
• Daylight blocking filter matched with 870 nm to
950 nm emitters
• Angle of half sensitivity: ϕ = ± 60°
• Package notch indicates collector
• Package matched with IR emitter series VSML3710
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Photo interrupters
• Miniature switches
• Counters
•Encoders
• Position sensors
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
19032
PRODUCT SUMMARY
COMPONENT I
ca
(mA) ϕ (deg) λ
0.5
(nm)
VEMT3700F 0.5 ± 60 870 to 1050
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMT3700F-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2
VEMT3700F-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
5V
Collector current I
C
50 mA
Collector peak current t
p
/T ≤ 0.1, t
p
≤ 10 μs I
CM
100 mA
Power dissipation P
V
100 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature Acc. reflow solder profile fig. 10 T
sd
260 °C
Thermal resistance junction/ambient Soldered on PCB with pad dimensions: 4 mm x 4 mm R
thJA
400 K/W
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
www.vishay.com For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81584
2 Rev. 1.6, 14-Jul-10
VEMT3700F
Vishay Semiconductors
Silicon NPN Phototransistor
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature
020406080
0
25
50
75
100
125
P - Power Dissipation Limit (mW)
V
T
amb
- Ambient Temperature (°C)
100
20376
R = 400 K/W
10 30 50 70
90
thJA
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage I
C
= 1 mA V
(BR)CEO
70 V
Collector emitter dark current V
CE
= 20 V, E = 0 I
CEO
1 200 nA
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz, E = 0 C
CEO
3pF
Collector ligth current
E
e
= 1 mW/cm
2
, λ = 950 nm,
V
CE
= 5 V
I
ca
0.25 0.5 mA
Angle of half sensitivity ϕ ± 60 deg
Wavelength of peak sensitivity λ
p
940 nm
Range of spectral bandwidth λ
0.5
870 to 1050 nm
Collector emitter saturation voltage
E
e
= 1 mW/cm
2
, λ = 950 nm,
I
C
= 0.1 mA
V
CEsat
0.15 0.3 V
Rise time, fall time
V
S
= 5 V, I
C
= 1 mA, λ = 950 nm,
R
L
= 1 kΩ
t
r
/t
f
6μs
V
S
= 5 V, I
C
= 1 mA, λ = 950 nm,
R
L
= 100 Ω
t
r
/t
f
2μs
Cut-off frequency V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω f
c
180 kHz
20
100
40 60 80
10
10
1
10
2
10
3
10
4
V
CE
= 20 V
T
amb
- Ambient Temperature (°C)
I
CEO
- Collector Dark Current (nA)
94 8304
0
0.6
0.8
1.0
1.2
1.4
2.0
20 40 60 80
100
1.6
1.8
λ
94 8239
T
amb
- Ambient Temperature (°C)
I
ca rel
- Relative Collector Current
V
CE
= 5 V
E
e
= 1 mW/cm
2
= 950 nm
Document Number: 81584 For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
Rev. 1.6, 14-Jul-10 3
VEMT3700F
Silicon NPN Phototransistor
Vishay Semiconductors
Fig. 4 - Collector Light Current vs. Irradiance
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.001
0.01
0.1
1
10
I
ca
- Collector Light Current (mA)
E
e
- Irradiance (mW/cm²)
10
94 8316
V
CE
= 5 V
λ = 950 nm
0.1 1 10
0.1
1
10
I
ca
- Collector Light Current (mA)
V
CE
- Collector Emitter Voltage (V)
100
94 8317
E
e
= 1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
λ = 950 nm
0.1 101
0
2
4
6
8
10
100
f = 1 MHz
C
CEO
- Collector Emitter Capacitance (pF)
V
CE
- Collector Emitter Voltage (V)
94 8294
0
0 2 4 6 8 10 12 14
2
8
6
4
V
CE
= 5 V
R
L
= 100 Ω
λ = 950 nm
t
off
t
on
I
C
- Collector Current (mA)
t
on
/t
off
- Turn-on/Turn-off Time (µs)
94 8293
750
850
950
1050
0
0.2
0.4
0.6
0.8
1.2
S (λ)
rel
- Relative Spectral Sensitivity
λ - Wavelength (nm)
1150
94 8408
1.0
0.4 0.2 0
S
rel
- Relative Sensitivity
94 8318
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
P1-P3P4-P6

VEMT3700F-GS08

Mfr. #:
Buy VEMT3700F-GS08
Manufacturer:
Vishay Semiconductors
Description:
Phototransistors 70V 100mW 850nm
Lifecycle:
New from this manufacturer.
Delivery:
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