Product Standards
Transistors with Built-in Resistor
DRC3124X0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Page
000 pcs / reel (standard)
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
+85 °COperating ambient temperature Topr -40
Parameter Symbol Rating Unit
Collector-emitter voltage (Base open) VCEO
50
V
1.
2.
3.
Code
Base
Emitter
SOT-723
Panasonic
Packaging
SSSMini3-F2-B
JEITA
Embossed type (Thermo-compression sealing) : 10
DRC3124X0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA3124X
DRC9124X in SSSMini3 type package
Features
Marking Symbol:
NF
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
SC-105AA
Collector
1of3
Unit: mm
Min Typ
Internal Connection
Resistance
value
47
k
R1
22
k
R2
Collector-base voltage (Emitter open) VCBO
50
V
°C
Total power dissipation PT
100
mW
Collector current IC
100
mA
Tstg -55 to +150
to
Junction temperature Tj 150
°C
Max UnitSymbol Conditions
Storage temperature
Collector-base voltage (Emitter open)
VCBO IC = 10 μA, IE = 0 50 V
Parameter
V
Collector-base cutoff current (Emitter open)
ICBO VCB = 50 V, IE = 0 0.1
mA
ICEO
μA
VCEO IC = 2 mA, IB = 0 50
0.5 μA
Emitter-base cutoff current (Collector open)
IEBO VEB = 6 V, IC = 0 0.2
0.6 V
400 -
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.5 mA
0.37
Input voltage
Vi(on) VCE = 0.2 V, IC = 5 mA
Vi(off) VCE = 5 V, IC = 100 μA
Collector-emitter cutoff current (Base open)
VCE = 50 V, IB = 0
Resistance ratio
R1/R2
R1
Input resistance
-30%
V2.1
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA 80
0.25 V
Collector-emitter voltage (Base open)
-
22 +30%
k
0.47 0.57
1.2
1.2
0.52
0.8
0.2
0.8
0.3
(0.4)
0.13
12
3
(0.4)
C
B
R
1
R
2
E
