HMC263

AMPLIFIERS - LOW NOISE - CHIP
1
1 - 5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS IN INCHES (MILLIMETERS)
2. ALL TOLERANCES ARE ±0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
Drain Bias Voltage (Vdd1, Vdd2) +5.5 Vdc
RF Input Power (RFIN)(Vdd = +3 Vdc) -5 dBm
Channel Temperature 175 °C
Continuous Pdiss (T = 85 °C)
(derate 7.69 mW/°C above 85 °C)
0.692 W
Thermal Resistance
(channel to die bottom)
130 °C/ W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information
[1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC263
v04.0907
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LOW NOISE - CHIP
1
1 - 6
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Pad Number Function Description Interface Schematic
1 RFIN This pad is AC coupled and matched to 50 Ohm.
2, 3 Vdd1, Vdd2
Power supply for the 4-stage ampli er. An external RF bypass
capacitor of 100 - 300 pF is required. The bond length to the
capacitor should be as short as possible. The ground side of the
capacitor should be connected to the housing ground.
4 RFOUT This pad is AC coupled and matched to 50 Ohm.
Pad Description
Assembly Diagrams
HMC263
v04.0907
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LOW NOISE - CHIP
1
1 - 7
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or
with conductive epoxy (see HMC general Handling, Mounting, Bonding
Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin  lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin  lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of the
die is coplanar with the surface of the substrate. One way to accomplish
this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick
molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
An RF bypass capacitor should be used on the Vdd input. A 100pF single
layer capacitor (mounted eutectically or by conductive epoxy) placed no
further than 0.762mm (30 Mils) from the chip is recommended.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD
protective containers, and then sealed in an ESD protective bag for
shipment. Once the sealed ESD protective bag has been opened, all die
should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias
cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or  ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and  at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a
tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C.
DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy  llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturers schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire (DC Bias) or ribbon bond (RF ports) 0.076mm
x 0.013mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of
150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and
terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC263
v04.0907
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D

HMC263

Mfr. #:
Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier lo Noise amp Chip, 24 - 36 GHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet