VS-T..RIA Series
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Vishay Semiconductors
Revision: 20-Dec-16
5
Document Number: 93756
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Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Gate Characteristics
500
600
700
800
900
1000
1100
1200
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
T50RIA.. Series
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
J
500
600
700
800
900
1000
1100
1200
1300
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
T50RIA.. Series
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4 4.5
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T50RIA.. Series
T = 125°C
J
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(1)
(2)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
Rectangular gate pulse
(1) PGM = 10W, tp = 5ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500µs
<=30% rated di/dt : 20V, 65ohms
tr=1µs, tp>=6µs
T50RIA.. Series Frequency Limited by PG(AV)
rated di/dt : 20V, 30ohms;
tr=0.5µs, tp>=6µs
(3)
(4)