VS-T..RIA Series
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Vishay Semiconductors
Revision: 20-Dec-16
2
Document Number: 93756
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Note
(1)
Available with dV/dt = 1000 V/μs, to complete code add S90 i.e. T90RIA80S90
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS T50RIA T70RIA T90RIA UNITS
Maximum average on-state current at
case temperature
I
T(AV)
180° conduction, half sine wave
50 70 90 A
70 70 70 °C
Maximum RMS on-state current I
T(RMS)
80 110 141 A
Maximum peak, one-cycle on-state,
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sine half wave,
initial
T
J
= T
J
maximum
1310 1660 1780
A
t = 8.3 ms 1370 1740 1870
t = 10 ms
100 % V
RRM
reapplied
1100 1400 1500
t = 8.3 ms 1150 1460 1570
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
8550 13 860 15 900
A
2
s
t = 8.3 ms 7800 12 650 14 500
t = 10 ms
100 % V
RRM
reapplied
6050 9800 11 250
t = 8.3 ms 5520 8950 10 270
Maximum I
2
t for fusing I
2
t t = 0.1 to 10 ms, no voltage reapplied 85 500 138 500 159 100 A
2
s
Low level value of threshold voltage V
T(TO)1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
), T
J
maximum 0.97 0.77 0.78
V
High level value of threshold voltage V
T(TO)2
(I > x I
T(AV)
), T
J
maximum 1.13 0.88 0.88
Low level value of on-state slope
resistance
r
t1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
), T
J
maximum 4.1 3.6 2.9
m
High level value of on-state slope
resistance
r
t2
(I > x I
T(AV)
), T
J
maximum 3.3 3.2 2.6
Maximum on-state voltage drop V
TM
I
TM
= x I
T(AV)
, T
J
= 25 °C, t
p
= 400 μs square
Average power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
2
1.60 1.55 1.55 V
Maximum forward voltage drop V
FM
I
TM
= x I
T(AV)
, T
J
= 25 °C, t
p
= 400 μs square
Average power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
2
1.60 1.55 1.55 V
Maximum holding current I
H
Anode supply = 6 V, initial I
T
= 30 A, T
J
= 25 °C 200 200 200
mA
Maximum latching current I
L
Anode supply = 6 V, resistive load = 10
Gate pulse: 10 V, 100 μs, T
J
= 25 °C
400 400 400
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time t
gd
T
J
= 25 °C, V
d
= 50 % V
DRM
, I
TM
= 50 A
I
g
= 500 mA, t
r
0.5, t
p
6 μs
0.9
μsTypical reverse recovery time t
rr
T
J
= 125 °C, I
TM
= 50 A, t
p
= 300 μs, dI/dt = 10 A/μs 3
Typical turn-off time t
q
T
J
= T
J
maximum, I
TM
= 50 A, t
p
= 300 μs, dI/dt = 15 A/μs,
V
R
= 100 V, linear to 80 % V
DRM
110
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and off-state
leakage current
I
RRM
,
I
DRM
T
J
= T
J
maximum 15 mA
RMS isolation voltage V
ISOL
50 Hz, circuit to base, all terminals shorted, T
J
= 25 °C, t = 1 s 3500 V
Critical rate of rise of
off-state voltage
dV/dt T
J
= T
J
maximum, linear to 80 % rated V
DRM
(1)
500 V/μs
