VS-T..RIA Series
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Vishay Semiconductors
Revision: 20-Dec-16
7
Document Number: 93756
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Fig. 13 - Maximum Non-Repetitive Surge Current Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - On-State Voltage Drop Characteristics
Fig. 16 - Gate Characteristics
700
800
900
1000
1100
1200
1300
1400
1500
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
T70RIA.. Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
RRM
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
T70RIA.. Series
1
10
100
1000
00.511.522.533.54
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T70RIA.. Series
T = 125°C
J
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(1)
(2)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
Rectangular gate pulse
T70RIA.., T90RIA.. Series Frequency Limited by PG(AV)
tr=1µs, tp>=6µs
rated di/dt : 20V, 20ohms;
tr=0.5µs, tp>=6µs
<=30% rated di/dt : 15V, 40ohms
(1) PGM = 12W, tp = 5ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 200W, tp = 300µs
(3) (4)
