BTA308S-800ET
3Q Hi-Com Triac
14 July 2017 Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a TO252 (DPAK) surface mountable
plastic package. This triac balances the requirements of commutation performance and
gate sensitivity and is intended for interfacing with low power drivers and logic ICs including
microcontrollers. This "series ET" triac will commutate the full rated RMS current at the maximum
rated junction temperature (T
j(max)
= 150 °C) without the aid of a snubber.
2. Features and benefits
High voltage capability
High commutation capability with maximum false trigger immunity
Direct interfacing with low level power drivers and logic ICs
High junction operating temperature capability (T
j(max)
= 150 °C)
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
Sensitive gate for easy logic level triggering
Surface mountable package
3. Applications
Compressor starting control circuits
General purpose motor controls
Reversing induction motor controls e.g. vertical axis washing machines
Applications subject to high temperature (T
j(max)
= 150 °C)
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 800 V
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 131 °C; Fig. 1;
Fig. 2; Fig. 3
- - 8 A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 60 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
- - 65 A
T
j
junction temperature - - 150 °C
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
- - 10 mA
WeEn Semiconductors
BTA308S-800ET
3Q Hi-Com Triac
BTA308S-800ET All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 14 July 2017 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
- - 10 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
- - 10 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - - 30 mA
V
T
on-state voltage I
T
= 10 A; T
j
= 25 °C; Fig. 10 - 1.3 1.65 V
Dynamic characteristics
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
400 - - V/µsdV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
200 - - V/µs
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 8 A;
dV
com
/dt = 20 V/µs; snubberless
condition; gate open circuit; Fig. 12
3 - - A/ms
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 8 A;
dV
com
/dt = 10 V/µs; gate open circuit
4 - - A/ms
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 8 A;
dV
com
/dt = 1 V/µs; gate open circuit
6 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb T2 mounting base; main
terminal 2
3
2
mb
1
DPAK (TO252N)
sym051
T1
G
T2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BTA308S-800ET DPAK plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
TO252N
WeEn Semiconductors
BTA308S-800ET
3Q Hi-Com Triac
BTA308S-800ET All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 14 July 2017 3 / 13
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
- 800 V
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 131 °C; Fig. 1;
Fig. 2; Fig. 3
- 8 A
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
- 60 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms - 65 A
I
2
t I
2
t for fusing t
p
= 10 ms; SIN - 18 A²s
dI
T
/dt rate of rise of on-state
current
I
G
= 20 mA - 100 A/µs
I
GM
peak gate current - 2 A
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
-50
0
50
100 150
0
2
4
6
8
10
T
mb
(°C)
I
T(RMS)
(A)
aaf029-001
131 °C
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
10
-2
10
-1
1
10
6
7
8
9
10
11
12
surge duration (s)
I
T(RMS)
(A)
aaf029-002
f = 50 Hz; T
mb
= 131 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values

BTA308S-800ETJ

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Triacs BTA308S-800ETJ/DPAK/REEL 13\" Q1/T1 *STANDARD MARK SMD,REEL 13\" Q1/T1 *STANDARD MARK SMD
Lifecycle:
New from this manufacturer.
Delivery:
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