UA2V50LM-E

UA2V50LM
SMD-00084 Rev E
Subject to Change Without Notice
1 of 4
Features
30dBm output power @ 10GHz
26dBm output power @ 40GHz
18dB gain to 26GHz
15dB gain to 40GHz
Useful gain and power to 50GHz
10.6W power dissipation
Small size
ECCN 3A001.b.4.c
Description
The UA2V50LM Amplifier is a
broadband, high power, moderate
gain instrumentation grade amplifier.
The amplifier was designed to provide
exceptional gain flatness per octave
over greater than 5 octaves of
frequency coverage. The 2 GHz to 50
GHz amplifier provides up to 18dB of
gain and 30 dBm output power with
low harmonics and low residual
phase noise.
Application
The UA2V50LM Amplifier is an ideal selection
for laboratory and instrumentation systems
where a high performance broadband RF
power amplifier is required. Examples include
use as a post amplifier for synthesizers,
mixers, modulators, etc. where output
powers are low and need to be increased
to the 20dBm to 30dBm range. The amplifier
was designed for use in communications
systems, test equipment, military systems, etc.
Key Characteristics @ 25˚C: VD1 = VD2 = 6V; VD3 = 7V; Vg1 = Vg2 = Vg3 = -0.1V; Zo = 50Ω
Parameter
Description
Min
Typ
Max
Min
Max
S21 (dB)
Small Signal Gain
15
18
-
12
-
S11 (dB)
Input Match
-
-10
-8
-
-5
S22 (dB)
Output Match
-
-12
-10
-
-5
S12 (dB)
Reverse Isolation
-
28
-
-
-
2 - 50GHz Power Amplifier
UA2V50LM
SMD-00084 Rev E
Subject to Change Without Notice
2 of 4
Typical Performance
UA2V50LM Group Delay UA2V50LM S11, S22
UA2V50LM Saturated Output Power
Supplemental Specifications1
Note:
It is recommended to apply gate
bias voltages before drain bias
voltages, however, it is not
necessary to absolutely guarantee
this sequence. This device is
robust and will survive drain
voltages being applied before
gate voltages.
1Operation listed under the Supplemental Specifications may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the Operating Specifications is not implied. Prolonged use at the abso-
lute maximum rating conditions may affect device reliability.
Parameter
Description
Minimum
Typ
Maximum
Vd2 (V)
Drain Bias Voltage FET2
-
6
8
Vg2 (V)
Gate Bias Voltage FET2
-4
-0.2 to 0
0.5
Idd2 (mA)
Drain Bias Current FET2
-
600
1000
Vd3 (V)
Dain Bias Voltage FET3
-
6
8
Vg3 (V)
Gate Bias Voltage FET3
-4
-0.2 to 0
0.5
Idd3
Drain Bias Current FET3
-
1000
1200
Pin
Input Power (CW)
-
-
28 dBm
Pdc
Power Dissipation
-
10.6
-
Tbs
Backside Case Temperature
-
-
75°C
UA2V50LM
SMD-00084 Rev E
Subject to Change Without Notice
3 of 4
Physical Dimensions and Pin Assignment
Physical
Characteristics
(all measurements
in inches[mm])
Tolerance typically
+/- 0.0025in
(+/- 0.0635mm)
DC pin diameter is
0.03in [0.76mm]
Pin
Function
Operational Notes
RFin
RF input
V-connector (female)
RFout
RF output
V-connector (male)
Vg2
1st stage gate bias
Set at typical operating specification
Vg3
2nd stage gate bias
Set at typical operating specification
Vd2
1st stage drain bias
Set at typical operating specification
Vd3
2nd stage drain bias
Set at typical operating specification
Ref
DC reference offset (optional)
Remove this offset from the detector voltage
(see appnote MM-AAP-004)
Det
RF power detector (optional)
Remove the DC offset from this signal and linearize
(see appnote MM-AAP-004)
Gnd
Connected
Connected to Ground

UA2V50LM-E

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
RF Development Tools Eval Kit
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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