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ESDM3551N2T5G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2017
August, 2017 − Rev. 1
1 Publication Order Number:
ESDM3551/D
ESDM3551
5.5V ESD Protection Diode
Micro−Packaged Diodes for ESD Protection
The ESDM3551 is designed to protect voltage sensitive components
that require low capacitance from ESD and transient voltage events.
Excellent clamping capability, low capacitance, low leakage, and fast
response time, make these parts ideal for ESD protection on designs
where board space is at a premium.
Features
• Low Clamping Voltage
• Small Body Outline Dimensions:
− 0201: 0.62 mm x 0.32 mm
− 0402: 1.00 mm x 0.60 mm
• Low Body Height: 0.3 mm
• Stand−off Voltage: 5.5 V
• IEC61000−4−2 Level 4 ESD Protection
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• USB ID Line Protection
• mSD Card Protection
• Audio Line Protection
• GPIO
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 61000−4−2 Contact
IEC 61000−4−2 Air
ISO 10605 150 pF/2 kW
ISO 10605 330 pF/2 kW
ISO 10605 330 pF/330 W
ESD ±30
±30
±30
±30
±30
kV
Total Power Dissipation on FR−5 Board
(Note 1) @ T
A
= 25°C
Thermal Resistance, Junction−to−Ambient
°P
D
°
R
q
JA
250
400
mW
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
Lead Solder Temperature − Maximum
(10 Second Duration)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
See Application Note AND8308/D for further description of survivability specs.
Device Package Shipping
†
ORDERING INFORMATION
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
ESDM3551MXT5G X3DFN2
(Pb−Free)
10000 / Tape &
Reel
X3DFN2 (0201)
CASE 152AF
MARKING
DIAGRAM
PIN 1
5 = Specific Device Code
(Rotated 270°)
M = Date Code
1
2
5 M
X2DFN2 (0402)
CASE 714AB
JJ = Specific Device Code
M = Date Code
JJ M
ESDM3551N2T5G X2DFN2
(Pb−Free)
10000 / Tape &
Reel
SZESDM3551N2T5G X2DFN2
(Pb−Free)
10000 / Tape &
Reel
Bi−Directional TVS
I
PP
I
PP
V
I
I
R
I
T
I
T
I
R
V
RWM
V
C
V
BR
V
RWM
V
C
V
BR
ESDM3551
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol Conditions Min Typ Max Unit
Reverse Working Voltage V
RWM
5.5 V
Breakdown Voltage (Note 2) V
BR
I
T
= 1 mA 5.6 7.0 V
Reverse Leakage Current I
R
V
RWM
= 5.5 V 0.1
mA
Clamping Voltage (Note 3) V
C
I
PP
= 1 A 6.0 V
Clamping Voltage (Note 3) V
C
I
PP
= 8 A 8.2 V
Peak Pulse Current (Note 3) I
PP
t
P
= 8/20 ms
9.9 A
Clamping Voltage
TLP (Note 4)
V
C
I
PP
= 16 A
IEC 61000−4−2 Level 4 equivalent
(±8 kV Contact, ±15 kV Air)
7.5 V
Junction Capacitance C
J
V
R
= 0 V, f = 1 MHz 21 pF
Dynamic Resistance R
DYN
TLP Pulse 0.11
W
Insertion Loss f = 10 MHz 0.01 dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
3. Non−repetitive current pulse at T
A
= 25°C, per IEC61000−4−5 waveform.
4. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z
0
= 50 W, t
p
= 100 ns, t
r
= 4 ns, averaging window; t
1
= 30 ns to t
2
= 60 ns.
TYPICAL CHARACTERISTICS
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
TIME (ns)
−20 1400 20 40 60 80 100 120
TIME (ns)
−20 1400 20 40 60 80 100 120
40
35
30
25
20
15
10
5
0
−5
VOLTAGE (V)
5
0
−5
−10
−15
−20
−25
−30
−35
−40
VOLTAGE (V)
ESDM3551
www.onsemi.com
3
TYPICAL CHARACTERISTICS
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
0.0E+00 5.0E+08 1.0E+09 1.5E+09 2.0E+09
−10
−9
−8
−7
−6
−5
−4
−3
−2
−1
0
1
1.0E+07 1.0E+08 1.0E+09
Figure 3. IV Characteristics Figure 4. CV Characteristics
I
R
(A)
V
R
(V)
C (pF)
V
BIAS
(V)
1.E−11
1.E−10
1.E−09
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
−8 −6 −4 −2 0 2 4
25
−5 −4 −3 −2 −1 0 1 2 3
Figure 5. RF Insertion Loss Figure 6. Capacitance over Frequency
CAPACITANCE (pF)
FREQUENCY
68 45
S21 (dB)
FREQUENCY (Hz)
Figure 7. Positive TLP I−V Curve
TLP CURRENT (A)
VOLTAGE (V)
0
2
4
6
8
10
12
14
16
18
20
0246810
Figure 8. Negative TLP I−V Curve
TLP CURRENT (A)
VOLTAGE (V)
−20
−18
−16
−14
−12
−10
−8
−6
−4
−2
0
024 6810
10
8
6
4
2
0
EQUIVALENT V
IEC
(kV)
10
8
6
4
2
0
EQUIVALENT V
IEC
(kV)
13579 13579
−10 10
20
15
10
5
0
P1-P3P4-P6P7-P8

ESDM3551N2T5G

Mfr. #:
Buy ESDM3551N2T5G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors BIDIRECTIONAL 5V MID-CAP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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