BD809G Datasheet BD809G, BD810G, BD810 | P1-P3

November, 2014 − Rev. 8

1 Publication Order Number:

BD809/D

BD809(NPN),

BD810(PNP)

Plastic High Power

Silicon Transistors

These devices are designed for use in high power audio amplifiers

utilizing complementary or quasi complementary circuits.

Features

• High DC Current Gain

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

CEO

80 Vdc

Collector−Base Voltage V

CBO

80 Vdc

Emitter−Base Voltage V

EBO

5.0 Vdc

Collector Current I

C

10 Adc

Base Current I

B

6.0 Adc

Total Device Dissipation

@ T

C

= 25°C

Derate above 25°C

P

D

90

0.72

W

W/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case

R

q

JC

1.39 °C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

10 AMPERE

POWER TRANSISTORS

80 VOLTS

90 WATTS

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MARKING DIAGRAM

BD8xx = Device Code

x = 09 or 10

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

BD8xxG

AY WW

Device Package Shipping

ORDERING INFORMATION

BD809G TO−220

(Pb−Free)

50 Units/Rail

BD810G TO−220

(Pb−Free)

50 Units/Rail

TO−220

CASE 221A

STYLE 1

1

2

3

4

1

BASE

EMITTER 3

COLLECTOR 2, 4

1

BASE

EMITTER 3

COLLECTOR 2, 4

PNP NPN

BD809 (NPN), BD810 (PNP)

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2

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

Collector−Emitter Sustaining Voltage (Note 1)

(I

C

= 0.1 Adc, I

B

= 0)

BV

CEO

80 −

Vdc

Collector Cutoff Current

(V

CB

= 80 Vdc, I

E

= 0)

I

CBO

− 1.0

mAdc

Emitter Cutoff Current

(V

BE

= 5.0 Vdc, I

C

= 0)

I

EBO

− 2.0

mAdc

DC Current Gain

(I

C

= 2.0 A, V

CE

= 2.0 V)

(I

C

= 4.0 A, V

CE

= 2.0 V)

h

FE

30

15

−

Collector−Emitter Saturation Voltage (Note 1)

(I

C

= 3.0 Adc, I

B

= 0.3 Adc)

V

CE(sat)

− 1.1

Vdc

Base−Emitter On Voltage (Note 1)

(I

C

= 4.0 Adc, V

CE

= 2.0 Vdc)

V

BE(on)

− 1.6

Vdc

Current−Gain Bandwidth Product

(I

C

= 1.0 Adc, V

CE

= 10 Vdc, f = 1.0 MHz)

f

T

1.5 −

MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

Figure 1. Active Region DC Safe Operating Area

(see Note on page 3)

10

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

3

1

0.1

3 10 30 100

0.3

I

C

, COLLECTOR CURRENT (AMP)

dc

5 ms

1

1 ms

.5 ms

1 ms

90

80

0

0 25 50 100 125 150 175

Figure 2. Power−Temperature Derating Curve

T

C

, CASE TEMPERATURE (°C)

P

D

, POWER DISSIPATION (WATTS)

75

10

70

60

50

40

30

20

500

I

C

, COLLECTOR CURRENT (AMP)

0.50.2 101.0 2.0

100

50

h

FE

, DC CURRENT GAIN

T

J

= 150°C

25°C

-55°C

200

20

BD809 (NPN)

BD810 (PNP)

I

C

, COLLECTOR CURRENT (AMP)

h

FE

, DC CURRENT GAIN

T

J

= 150°C

25°C

-55°C

5.0

V

CE

= 2.0 V

V

CE

= 2.0 V

10

5.0 0.50.2 101.0 2.0 205.0

500

100

50

200

20

5.0

10

Figure 3. DC Current Gain

BD809 (NPN), BD810 (PNP)

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3

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0 100

I

C

= 1.0 A

T

J

= 25°C

10

4.0 A 8.0 A

20 50 20001000200 500

Figure 4. Collector Saturation Region

2.0

I

B

, BASE CURRENT (mA)

5.0 100 5000

1.8

1.6

1.4

1.2

I

C

= 1.0 A

T

J

= 25°C

0

10

4.0 A 8.0 A

20 50

1.0

0.2

0.6

0.8

0.4

20001000200 500 5000

2.0

1.8

1.6

1.4

1.2

0

1.0

0.2

0.6

0.8

0.4

I

B

, BASE CURRENT (mA)

V

CE(sat)

@ I

C

/I

B

= 10

T

J

= 25°C

V

BE

@ V

CE

= 2.0 V

2.8

1.6

1.2

2.4

0

0.8

0.4

0.2 0.5 2.0 20101.0 5.0

V

BE(sat)

@ I

C

/I

B

= 10

2.0

I

C

, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

Figure 5. “On” Voltages

I

C

, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

V

CE(sat)

@ I

C

/I

B

= 10

T

J

= 25°C

V

BE

@ V

CE

= 2.0 V

2.8

1.6

1.2

2.4

0

0.8

0.4

0.2 0.5 2.0 20101.0 5.0

V

BE(sat)

= I

C

/I

B

= 10

2.0

Figure 6. Thermal Response

t, PULSE WIDTH (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.03

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 20 30 50 100 200 300 100

0

500

q

JC

(t) = r(t) q

JC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

1

T

J(pk)

- T

C

= P

(pk)

q

JC

(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t

1

/t

2

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

SINGLE

PULSE

Note:

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate I

C

− V

CE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 1 is based on T

J(pk)

= 150°C; T

C

is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided T

J(pk)

≤ 150°C. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

BD809G

BD809G

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