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1N1188R

P1-P2
V
RRM
= 50 V - 1000 V
I
F
= 35 A
Features
• High Surge Capability DO-5 Package
• Types up to 1000 V V
RRM
Parameter Symbol Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
V
1N1188 thru 1N1190R
Conditions 1N1188 (R) 1N1189 (R) 1N1190 (R)
500
Silicon Standard
Recover
y
Diode
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
400 600
pp g
RMS reverse voltage
V
RMS
V
DC blocking voltage
V
DC
V
Continuous forward current
I
F
A
Operating temperature
T
j
°C
Storage temperature
T
stg
°C
Parameter Symbol Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
°C/W
V
R
= 50 V, T
j
= 25 °C
I
F
= 35 A, T
j
= 25 °C
Reverse current
I
R
V
F
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
A
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 140 °C
Conditions
350280
0.25 0.25
V
R
= 50 V, T
j
= 140 °C
10 10 10
500400
10
1N1190 (R)
1.2
10 10
-65 to 190 -65 to 190
-65 to 175 -65 to 175 -65 to 175
1N1188 (R) 1N1189 (R)
0.25
35 35 35
595 595 595
420
600
1.2 1.2
-65 to 190
www.genesicsemi.com
1
1N1188 thru 1N1190R
www.genesicsemi.com
2
P1-P2

1N1188R

Mfr. #:
Buy 1N1188R
Manufacturer:
GeneSiC Semiconductor
Description:
Rectifiers 400V 35A REV Leads Std. Recovery
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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