74AHC_AHCT02_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 21 May 2008 6 of 14
NXP Semiconductors
74AHC02; 74AHCT02
Quad 2-input NOR gate
10. Dynamic characteristics
74AHCT02
V
IH
HIGH-level
input voltage
V
CC
= 4.5 V to 5.5 V 2.0 - - 2.0 - 2.0 - V
V
IL
LOW-level
input voltage
V
CC
= 4.5 V to 5.5 V - - 0.8 - 0.8 - 0.8 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= −50 µA 4.4 4.5 - 4.4 - 4.4 - V
I
O
= −8.0 mA 3.94 - - 3.80 - 3.70 - V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 50 µA - 0 0.1 - 0.1 - 0.1 V
I
O
= 8.0 mA - - 0.36 - 0.44 - 0.55 V
I
I
input leakage
current
V
I
= 5.5 V or GND;
V
CC
= 0 V to 5.5 V
- - 0.1 - 1.0 - 2.0 µA
I
CC
supply current V
I
=V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
- - 2.0 - 20 - 40 µA
∆I
CC
additional
supply current
per input pin;
V
I
=V
CC
− 2.1 V;
other pins at V
CC
or GND;
I
O
= 0 A; V
CC
= 4.5 V to 5.5 V
- - 1.35 - 1.5 - 1.5 mA
C
I
input
capacitance
- 3 10 - 10 - 10 pF
Table 6. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
Table 7. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.
Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ
[1]
Max Min Max Min Max
74AHC02
t
pd
propagation
delay
nA, nB to nY; see Figure 6
[2]
V
CC
= 3.0 V to 3.6 V
C
L
= 15 pF - 3.9 7.9 1.0 9.5 1.0 10.0 ns
C
L
= 50 pF - 5.5 11.4 1.0 13 1.0 14.5 ns
V
CC
= 4.5 V to 5.5 V
C
L
= 15 pF - 2.9 5.5 1.0 6.5 1.0 7.0 ns
C
L
= 50 pF 4.2 7.5 1.0 8.5 1.0 9.5 ns
C
PD
power
dissipation
capacitance
C
L
= 50 pF; f
i
= 1 MHz;
V
I
= GND to V
CC
[3]
- 7.0 - - - - - pF
