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SIE854DF-T1-GE3

P1-P3P4-P6P7-P9P10-P10
www.vishay.com
4
Document Number: 69824
S09-1338-Rev. B, 13-Jul-09
Vishay Siliconix
SiE854DF
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
10
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
1
100
1.5
2.0
2.5
3.0
3.5
4.0
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
0.005
0.010
0.015
0.020
0.025
0.030
45678 910
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
A
= 25 °C
T
A
= 125 °C
I
D
= 13.2 A
0
30
5
0
10
20
)
W
(
r e w o P
Time (s)
40
10 1000 1 0.1 0.01 100
Safe Operating Area, Junction-to-Ambient
0.01
100
1
100
0.01
- Drain Current (A)
I
D
0.1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1ms
10 ms
100 ms
DC
0.1 1 10
10
T
A
= 25 °C
Single Pulse
Limited byR
DS(on)
*
1s
10 s
BVDSS
100 us
Document Number: 69824
S09-1338-Rev. B, 13-Jul-09
www.vishay.com
5
Vishay Siliconix
SiE854DF
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
10
20
30
40
50
60
70
80
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Package Limited
Power Derating, Junction-to-Case
0
20
40
60
80
100
120
140
25 50 75 100 125 150
T
C
- Case Temperature (°C)
)
W
(
n o i t a p i s s i D r e w o P
www.vishay.com
6
Document Number: 69824
S09-1338-Rev. B, 13-Jul-09
Vishay Siliconix
SiE854DF
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69824
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 600 10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n e i s n a r T e v i t c e
f
f
E d e z i l a m r o N
e c n a d e p m I l a m r e h T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 55 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
10
-3
10
-2
110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n e i s n a r T e v i t c e f f E
d e
z i
l
a
m r o N
e c n a d e p m I l a m r e h T
0.02
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Source
10
-3
10
-2
110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t
n
e i s
n
a r T e v
i
t c
e
f
f
E
d
e z i l a
m r
o N
e c n
a
d e p m I
l a m r e h T
0.02
Single Pulse
P1-P3P4-P6P7-P9P10-P10

SIE854DF-T1-GE3

Mfr. #:
Buy SIE854DF-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SIR846ADP-T1-GE3
Lifecycle:
New from this manufacturer.
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