©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002
KSK596
Si N-channel Junction FET
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
I
DSS
Classification
Symbol Parameter Ratings Units
V
GDO
Gate-Drain Voltage -20 V
I
G
Gate Current 10 mA
I
D
Drain Current 1 mA
P
D
Power Dissipation 100 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
GDO
Gate-Drain Breakdown Voltage I
G
= -100uA -20 V
V
GS
(off) Gate-Source Cut-off Voltage V
DS
=5V, I
D
=1µA -0.6 -1.5 V
I
DSS
Drain Current V
DS
=5V, V
GS
=0 100 350 µA
lY
FS
l Forward Transfer Admittance V
DS
=5V, V
GS
=0, f=1MHz 0.4 1.2 ms
C
iss
Input Capacitance V
DS
=5V, V
GS
=0, f=1MHz 3.5 pF
C
rss
Output Capacitance V
DS
=5V, V
GS
=0, f=1MHz 0.65 pF
Classification A B C
I
DSS
(µA) 100 ~ 170 150 ~ 240 210 ~ 350
KSK596
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
1.Source 2. Gate 3. Drain
TO-92S
1
