OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NST847BPDP6T5G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2008
June, 2017 − Rev. 1
1 Publication Order Number:
NST847BPDP6/D
NST847BPDP6T5G
Dual Complementary
General Purpose Transistor
The NST847BPDP6T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT−963
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
Features
• h
FE
, 200−450
• Low V
CE(sat)
, ≤ 0.3 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• This is a Pb−Free Device
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
45 Vdc
Collector−Base Voltage V
CBO
50 Vdc
Emitter−Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
100 mAdc
Electrostatic Discharge HBM
MM
ESD
Class
2
B
THERMAL CHARACTERISTICS
Characteristic (Single Heated) Symbol Max Unit
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 1)
P
D
240
1.9
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 1)
R
q
JA
520 °C/W
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 2)
P
D
280
2.2
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 2)
R
q
JA
446 °C/W
Characteristic (Dual Heated) (Note 3) Symbol Max Unit
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 1)
P
D
350
2.8
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 1)
R
q
JA
357 °C/W
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 2)
P
D
420
3.4
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 2)
R
q
JA
297 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
2. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels
Q
1
(1)(2)
(3)
(4) (5) (6)
Q
2
NST847BPDP6T5G*
ORDERING INFORMATION
*Q1 PNP
Q2 NPN
www.onsemi.com
Device Package Shipping
†
NST847BPDP6T5G SOT−963
(Pb−Free)
8000/Tape & Reel
SOT−963
CASE 527AD
MARKING DIAGRAM
A = Device Code
M = Date Code
A M
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NST847BPDP6T5G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 1.0 mA, I
B
= 0) (NPN)
(I
C
= −1.0 mA, I
B
= 0) (PNP)
V
(BR)CEO
45
−45
−
−
−
−
V
Collector−Base Breakdown Voltage
(I
C
= 10 mA, I
E
= 0) (NPN)
(I
C
= −10 mA, I
E
= 0) (PNP)
V
(BR)CBO
50
−50
−
−
−
−
V
Collector−Emitter Breakdown Voltage
(I
C
= 10 mA) (NPN)
(I
C
= −10 mA) (PNP)
V
(BR)CES
50
−50
−
−
−
−
V
Emitter−Base Breakdown Voltage
(I
E
= 1.0 mA, I
C
= 0) (NPN)
(I
E
= −1.0 mA, I
C
= 0) (PNP)
V
(BR)EBO
6.0
−5.0
−
−
−
−
V
Collector Cutoff Current
(V
CB
= 30 V) (NPN)
(V
CB
= 30 V, T
A
= 150°C) (NPN)
(V
CB
= −30 V) (PNP)
(V
CB
= −30 V, T
A
= 150°C) (PNP)
I
CBO
−
−
−
−
−
−
−
−
15
5.0
−15
−4.0
nA
mA
nA
mA
ON CHARACTERISTICS (Note 4)
DC Current Gain
(I
C
= 2.0 mA, V
CE
= 5.0 V) (NPN)
(I
C
= −2.0 mA, V
CE
= −5.0 V) (PNP)
h
FE
200
220
290
290
450
475
−
Collector−Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA) (NPN)
(I
C
= 100 mA, I
B
= 5.0 mA)
(I
C
= −10 mA, I
B
= −0.5 mA) (PNP)
(I
C
= −100 mA, I
B
= −5.0 mA)
V
CE(sat)
−
−
−
−
−
−
−
−
0.25
0.60
−0.30
−0.70
V
Base −Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA) (NPN)
(I
C
= 100 mA, I
B
= 5.0 mA)
(I
C
= −10 mA, I
B
= −0.5 mA) (PNP)
(I
C
= −100 mA, I
B
= −5.0 mA)
V
BE(sat)
−
−
−
−
0.70
0.90
−0.70
−0.90
−
−
−
−
V
Base −Emitter On Voltage
(I
C
= 2.0 mA, V
CE
= 5.0 V) (NPN)
(I
C
= 10 mA, V
CE
= 5.0 V)
(I
C
= −2.0 mA, V
CE
= −5.0 V) (PNP)
(I
C
= −10 mA, V
CE
= −5.0 V)
V
BE(on)
0.58
−
−0.60
−
0.66
−
−
−
0.70
0.77
−0.75
−0.82
V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 V, f = 100 MHz) (NPN)
(I
C
= −10 mA, V
CE
= −5.0 V, f = 100 MHz) (PNP)
f
T
100
100
−
−
−
−
MHz
Output Capacitance
(V
CB
= 10 V, f = 1.0 MHz) (NPN)
(V
CB
= −10 V, f = 1.0 MHz) (PNP)
C
ob
−
−
−
−
4.5
4.5
pF
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 V, R
S
= 2 kW, f = 1 kHz, BW = 200 Hz) (NPN)
(I
C
= −0.2 mA, V
CE
= −5.0 V, R
S
= 2 kW, f = 1 kHz, BW = 200 Hz) (PNP)
NF
−
−
−
−
10
10
dB
4. Pulse Test: Pulse Width ≤ 300 μs; Duty Cycle ≤ 2.0%.
NST847BPDP6T5G
www.onsemi.com
3
NPN TRANSISTOR
100
0
0.0001
0.02
I
C
, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 2. DC Current Gain vs. Collector Current
0.18
0.0001 0.01
I
C
, COLLECTOR CURRENT (A)
0.04
0.001
0.06
500
600
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.08
0.10
I
C
/I
B
= 10
V
CE(sat)
= 150°C
0.10.010.001
25°C
−55°C
400
h
FE
, DC CURRENT GAIN (V)
300
200
0.1
150°C (5.0 V)
150°C (1.0 V)
25°C (5.0 V)
25°C (1.0 V)
−55°C (5.0 V)
−55°C (1.0 V)
0.12
0.14
0.16
NPN TRANSISTOR
P1-P3P4-P6P7-P7

NST847BPDP6T5G

Mfr. #:
Buy NST847BPDP6T5G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT DUAL COMP GP TRANS SOT963
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet