SI8851EDB-T2-E1 Datasheet SI8851EDB-T2-E1 | P1-P3

Si8851EDB

www.vishay.com

Vishay Siliconix

S15-1120-Rev. B, 18-May-15

1

Document Number: 64197

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-Channel 20 V (D-S) MOSFET

Ordering Information: 

Si8851EDB-T2-E1 (Lead (Pb)-free and halogen-free)

FEATURES

• TrenchFET

®

power MOSFET

• Small 2.4 mm x 2 mm outline area

• Low 0.4 mm max. profile

• Typical ESD protection 6000 V HBM

• Material categorization: for definitions

of compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Battery switch / load switch

• Power management

• For smart phones, tablet PCs, and

mobile computing

Notes

a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.

b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.

c. Refer to IPC/JEDEC

®

(J-STD-020), no manual or hand soldering.

d. Based on T

A

= 25 °C.

Notes

a. Surface mounted on 1" x 1" FR4 board with full copper.

b. Maximum under steady state conditions is 85 °C/W.

c. Surface mounted on 1" x 1" FR4 board with minimum copper.

d. Maximum under steady state conditions is 330 °C/W.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

() Max. I

D

(A)

a, d

Q

g

(Typ.)

-20

0.0080 at V

GS

= -4.5 V -16.7

70 nC

0.0086 at V

GS

= -3.7 V -16.1

0.0110 at V

GS

= -2.5 V -14.2

0.0185 at V

GS

= -1.8 V -11

A1

0.4 mm

B

C

D

E

2

3

4

D

G

S

8851

xxx

2 mm

2.4 mm

F

A

1

5

Bump Side ViewBackside View

Power MICRO FOOT

®

2.4 x 2

P-Channel MOSFET

S

D

G

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

-20

V

Gate-Source Voltage V

GS

± 8

Continuous Drain Current (T

J

= 150 °C)

T

A

= 25 °C

I

D

-16.7

a

A

T

A

= 70 °C -13.4

a

T

A

= 25 °C -7.7

b

T

A

= 70 °C -6.2

b

Pulsed Drain Current (t = 100 μs) I

DM

-80

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

-2.6

a

T

A

= 25 °C -0.55

b

Maximum Power Dissipation

T

A

= 25 °C

P

D

3.1

a

W

T

A

= 70 °C 2

a

T

A

= 25 °C 0.66

b

T

A

= 70 °C 0.43

b

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +150

°C

Package Reflow Conditions

c

VPR 260

IR/Convection 260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL Typical Maximum Unit

Maximum Junction-to-Ambient

a, b

t = 5 s

R

thJA

30 40

°C/W

Maximum Junction-to-Ambient

c, d

t = 5 s 145 188

Si8851EDB

www.vishay.com

Vishay Siliconix

S15-1120-Rev. B, 18-May-15

2

Document Number: 64197

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= -250 μA -20 - - V

V

DS

Temperature Coefficient V

DS

/T

J

I

D

= -250 μA

--11-

mV/°C

V

GS(th)

Temperature Coefficient V

GS(th)

/T

J

-3-

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= -250 μA -0.45 - -1 V

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 4.5 V - - ± 0.5

μA

V

DS

= 0 V, V

GS

= ± 8 V - - ± 10

Zero Gate Voltage Drain Current I

DSS

V

DS

= -20 V, V

GS

= 0 V - - -1

V

DS

= -20 V, V

GS

= 0 V, T

J

= 70 °C - - -10

On-State Drain Current

a

I

D(on)

V

DS

 -5 V, V

GS

= -4.5 V -5 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= -4.5 V, I

D

= -7 A - 0.0060 0.0080



V

GS

= -3.7 V, I

D

= -7 A - 0.0065 0.0086

V

GS

= -2.5 V, I

D

= -5 A - 0.0081 0.0110

V

GS

= -1.8 V, I

D

= -3 A - 0.0130 0.0185

Forward Transconductance

a

g

fs

V

DS

= -10 V, I

D

= -7 A - 50 - S

Dynamic

b

Input Capacitance C

iss

V

DS

= -10 V, V

GS

= 0 V, f = 1 MHz

- 6900 -

pFOutput Capacitance C

oss

- 640 -

Reverse Transfer Capacitance C

rss

- 715 -

Total Gate Charge Q

g

V

DS

= -10 V, V

GS

= -8 V, I

D

= -5 A - 120 180

nC

V

DS

= -10 V, V

GS

= -4.5 V, I

D

= -5 A

- 70 105

Gate-Source Charge Q

gs

-8-

Gate-Drain Charge Q

gd

-14-

Gate Resistance R

g

V

GS

= -0.1 V, f = 1 MHz - 2.3 - 

Turn-On Delay Time t

d(on)

V

DD

= -10 V, R

L

= 2 

I

D

 -5 A, V

GEN

= -4.5 V, R

g

= 1 

-3570

ns

Rise Time t

r

-4080

Turn-Off Delay Time t

d(off)

- 115 230

Fall Time t

f

-3570

Turn-On Delay Time t

d(on)

V

DD

= -10 V, R

L

= 2 

I

D

 -5 A, V

GEN

= -8 V, R

g

= 1 

-1530

Rise Time t

r

-1020

Turn-Off Delay Time t

d(off)

- 110 220

Fall Time t

f

-2550

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

T

A

= 25 °C - - -2.6

A

Pulse Diode Forward Current (t = 100 μs) I

SM

---80

Body Diode Voltage V

SD

I

S

= -5 A, V

GS

= 0 V - -0.8 -1.2 V

Body Diode Reverse Recovery Time t

rr

I

F

= -5 A, dI/dt = 100 A/μs,

T

J

= 25 °C

-4080ns

Body Diode Reverse Recovery Charge Q

rr

-3060nC

Reverse Recovery Fall Time t

a

-16-

ns

Reverse Recovery Rise Time t

b

-24-

Si8851EDB

www.vishay.com

Vishay Siliconix

S15-1120-Rev. B, 18-May-15

3

Document Number: 64197

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Gate Current vs. Gate-Source Voltage

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Current vs. Gate-Source Voltage

Transfer Characteristics

Capacitance

0.00

0.40

0.80

1.20

1.60

2.00

0 2 4 6 8 10 12 14

I

GSS

- Gate Current (mA)

V

GS

- Gate-Source Voltage (V)

T

J

= 25 °C

0

20

40

60

80

0.0

0.5 1.0 1.5 2.0 2.5 3.0

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

V

GS

= 2 V

V

GS

= 5 V thru 2.5 V

V

GS

= 1.5 V

0.000

0.010

0.020

0.030

0.040

0.050

0.060

0 20 40 60 80

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 1.8 V

V

GS

= 3.7 V

V

GS

= 2.5 V

V

GS

= 4.5 V

10

-2

10

-1

10

-3

10

-4

10

-5

10

-6

10

-7

10

-8

0 2 4 6 8 10 12 14

I

GSS

- Gate Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

J

= 150 °C

T

J

= 25 °C

0

4

8

12

16

20

0.0 0.3 0.6 0.9 1.2 1.5

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= 25

°

C

T

C

= 125

°

C

T

C

= - 55

°

C

0

2000

4000

6000

8000

10000

0 4 8 12 16 20

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

SI8851EDB-T2-E1

SI8851EDB-T2-E1

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