SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 FEBRUARY 1996 ✪
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low V
CE(sat)
COMPLEMENTARY TYPE BCP69
PARTMARKING DETAIL BCP68
BCP68 25
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
25 V
Collector-Emitter Voltage V
CEO
20 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
2A
Continuous Collector Current I
C
1A
Power Dissipation at T
amb
=25°C P
tot
2W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
25 V
I
C
=10µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
20 V I
C
= 30mA *
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5V
I
E
=10µA
Collector Cut-Off
Current
I
CBO
100
10
nA
µA
V
CB
=25V
V
CB
=25V, T
amb
=150°C
Emitter Cut-Off Current I
EBO
10
µA
V
EB
=5V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5 V I
C
=1A, I
B
=100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
0.6
1.0
V
V
I
C
=5A, V
CE
=10V*
I
C
=1A, V
CE
=1V*
Static Forward Current
Transfer Ratio
h
FE
BCP68
BCP68-25
50
63
160 250
400
400
I
C
=5mA, V
CE
=10V*
I
C
=500mA, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
Transition Frequency f
T
100 MHz I
C
=100mA, V
CE
=5V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT449 datasheet.
BCP68
C
C
E
B
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