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STN9260

P1-P3P4-P6P7-P9P10-P10
August 2011 Doc ID 18326 Rev 2 1/10
10
STN9260
High voltage fast-switching
PNP power transistor
Features
■ High voltage capability
■ Fast switching speed
Applications
■ Lighting
■ Switch mode power supply
Description
This device is a high voltage fast-switching PNP
power transistor. It is manufactured using high
voltage multi epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining a wide RBSOA. The device is
designed for use in lighting applications and low
cost switch-mode power supplies.
I
Figure 1. Internal schematic diagram
SOT-223
1
2
4
3
Table 1. Device summary
Part number Marking Package Packaging
STN9260 N9260 SOT-223 Tape and reel
www.st.com
Electrical ratings STN9260
2/10 Doc ID 18326 Rev 2
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
BE
= 0) -600 V
V
CEO
Collector-emitter voltage (I
B
= 0) -600 V
V
EBO
Emitter-base voltage (I
C
= 0) -7 V
I
C
Collector current -0.5 A
I
CM
Collector peak current (t
P
< 5 ms) -1 A
I
B
Base current -0.25 A
I
BM
Base peak current (t
P
< 5 ms) -0.5 A
P
TOT
Total dissipation at T
a
= 25 °C 1.6 W
T
STG
Storage temperature -65 to 150 °C
T
J
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJA
Thermal resistance junction-ambient
(1)
_max
1. Device mounted on PCB area of 1 cm².
78 °C/W
STN9260 Electrical characteristics
Doc ID 18326 Rev 2 3/10
2 Electrical characteristics
T
case
= 25 °C unless otherwise specified.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
Collector cut-off current
(V
BE
= 0)
V
CE
= -600 V -10 µA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= -7 V -1 µA
V
CE(sus)
(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
Collector-emitter
sustaining voltage
(I
B
= 0)
I
C
= -10 mA -600 V
V
CE(sat)
(1)
Collector-emitter
saturation voltage
I
C
= -100 mA I
B
= -10 mA -1 V
V
BE(sat)
(1)
Base-emitter saturation
voltage
I
C
= -100 mA I
B
= -10 mA -1 V
h
FE
DC current gain
I
C
= -10 mA V
CE
= -5 V
I
C
= -20 mA V
CE
= -5 V 50
140
t
r
t
s
t
f
Resistive load
Rise time
Storage time
Fall time
V
CC
=-200 V, I
C
=-0.1 A
I
B1
=-10 mA, I
B2
=20 mA
T
p
=30 µs
200
3.2
150
ns
µs
ns
P1-P3P4-P6P7-P9P10-P10

STN9260

Mfr. #:
Buy STN9260
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT PNP Trans -600V High Volt 1.6W -0.5A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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