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2PD601AQ,115

P1-P3P4-P6P7-P9
2004 Feb 12 3
NXP Semiconductors Product data sheet
NPN general purpose transistors; 50 V,
100 mA
2PD601A series
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Refer to SOT346 (SC-59) and SOT323 (SC-70) standard mounting conditions.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT346 (SC-59) and SOT323 (SC-70) standard mounting conditions.
Soldering
Reflow soldering is the only recommended soldering method.
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
2PD601AQ − plastic surface mounted package; 3 leads SOT346
2PD601AR
2PD601AS
2PD601AQW − plastic surface mounted package; 3 leads SOT323
2PD601ARW
2PD601ASW
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 60 V
V
CEO
collector-emitter voltage open base − 50 V
V
EBO
emitter-base voltage open collector − 6 V
I
C
collector current (DC) − 100 mA
I
CM
peak collector current − 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1
SOT346 − 250 mW
SOT323 − 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1
SOT346 500 K/W
SOT323 625 K/W
2004 Feb 12 4
NXP Semiconductors Product data sheet
NPN general purpose transistors; 50 V,
100 mA
2PD601A series
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector-base cut-off current I
E
= 0; V
CB
= 60 V − 10 nA
I
E
= 0; V
CB
= 60 V; T
j
= 150 °C − 5 μA
I
EBO
emitter-base cut-off current I
C
= 0; V
EB
= 5 V − 10 nA
h
FE
DC current gain I
C
= 100 mA; V
CE
= 2 V; note 1 90 −
h
FE
DC current gain I
C
= 2 mA; V
CE
= 10 V
group Q 160 260
group R 210 340
group S 290 460
V
CEsat
collector-emitter saturation voltage I
C
= 100 mA; I
B
= 10 mA; note 1 − 250 mV
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz − 3 pF
f
T
transition frequency I
C
= 2 mA; V
CE
= 10 V;
f
= 100 MHz
100 − MHz
2004 Feb 12 5
NXP Semiconductors Product data sheet
NPN general purpose transistors; 50 V,
100 mA
2PD601A series
PACKAGE OUTLINES
UNIT
A
1
b
p
cD
E
e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
mm
0.50
0.35
0.26
0.10
3.1
2.7
1.7
1.3
0.95
e
1.9
3.0
2.5
0.33
0.23
0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2
SOT346 TO-236 SC-59A
b
p
D
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
w
M
v
M
A
B
A
B
0 1 2 mm
scale
A
1.3
1.0
0.1
0.013
c
X
12
3
Plastic surface-mounted package; 3 leads SOT34
6
04-11-11
06-03-16
P1-P3P4-P6P7-P9

2PD601AQ,115

Mfr. #:
Buy 2PD601AQ,115
Manufacturer:
NXP Semiconductors
Description:
TRANS NPN 50V 0.1A SC-59
Lifecycle:
New from this manufacturer.
Delivery:
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