SUP/SUB75P05-08
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70891
S-99404—Rev. B, 29-Nov-99
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= –250 mA
–55
V
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= –250 mA
–1 –2 –3
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= "20 V
"100 nA
V
DS
= –44 V, V
GS
= 0 V –1
Zero Gate Voltage Drain Current I
DSS
V
DS
= –44 V, V
GS
= 0 V, T
J
= 125C –50
mA
V
DS
= –44 V, V
GS
= 0 V, T
J
= 175C –700
On-State Drain Current
a
I
D(on)
V
DS
= –5 V, V
GS
= –10 V –120 A
V
GS
= –10 V, I
D
= –30 A
0.008
Drain-Source On-State Resistance
a
r
V
GS
= –4.5 V, I
D
= –20 A 0.013
W
-
-
on
V
GS
= –10 V, I
D
= –30 A, T
J
= 125C 0.014
V
GS
= –10 V, I
D
= –30 A, T
J
= 175C 0.016
Forward Transconductance
a
g
fs
V
DS
= –15 V, I
D
= –30 A 75 S
Dynamic
b
Input Capacitance C
iss
8500
Output Capacitance C
oss
V
GS
= 0 V, V
DS
= –25 V, f = 1 MHz
1220
pF
Reversen Transfer Capacitance C
rss
915
Total Gate Charge
c
Q
g
140 225
Gate-Source Charge
c
Q
gs
V
DS
= –30 V, V
GS
= –10 V, I
D
= –75 A
30
nC
Gate-Drain Charge
c
Q
gd
30
Turn-On Delay Time
c
t
d(on)
13 20
Rise Time
c
t
r
V
DD
= –30 V, R
L
= 0.47 W
140 225
Turn-Off Delay Time
c
t
d(off)
I
D
] –75 A, V
GEN
= –10 V, R
G
= 2.5 W
115 185
Fall Time
c
t
f
175 300
Source-Drain Diode Ratings and Characteristics (T
C
= 25C)
b
Continuous Current I
s
–75
Pulsed Current I
SM
–240
Forward Voltage
a
V
SD
I
F
= –75 A, V
GS
= 0 V –1.1 –1.3 V
Reverse Recovery Time t
rr
60 120 ns
Peak Reverse Recovery Current I
RM(REC)
I
F
= –75 A, di/dt = 100 A/ms
2.2 3.5 A
Reverse Recovery Charge Q
rr
0.176 0.21 mC
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
