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SI5935CDC-T1-GE3

P1-P3P4-P6P7-P9P10-P11
www.vishay.com
4
Document Number: 68965
S10-0548-Rev. B, 08-Mar-10
Vishay Siliconix
Si5935CDC
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.10.30.50.70.91.11.3
T
J
= 150 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
0.2
0.3
0.4
0.5
0.6
0.7
0.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.03
0.06
0.09
0.12
0.15
0.18
02468
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
I
D
= - 3.1 A
0
10
20
30
40
Time (s)
Power (W)
110
-1
10
-4
10
-3
10
-2
100010010
Safe Operating Area, Junction-to-Case
T
A
= 25 °C
Single Pulse
100 ms
1s,10s
DC
Limited byR
DS(on)
*
BVDSS
Limited
10 ms
1ms
100 µs
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
Document Number: 68965
S10-0548-Rev. B, 08-Mar-10
www.vishay.com
5
Vishay Siliconix
Si5935CDC
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0 255075100125150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Package Limited
0
1
2
3
4
5
6
Power Derating, Junction-to-Foot
0.0
0.8
1.6
2.4
3.2
4.0
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power Derating, Junction-to-Ambient
0.0
0.3
0.6
0.9
1.2
0 25 50 75 100 125 150
T
A
-Ambient Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 68965
S10-0548-Rev. B, 08-Mar-10
Vishay Siliconix
Si5935CDC
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68965
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (s)
e v i t c e
f
f
E d e z i l a m r o N t n e i s n a r T
e c n a d e p m I l a m r e h T
2
1
0.1
0.01
10
-3
10
-2
1 10 600 10
-1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 110 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
1 10 10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
e v i
t
c e
f
f
E d e z i l a m r o N t n e i s n a
r
T
e
c
n a d e p m I l a m r e h
T
P1-P3P4-P6P7-P9P10-P11

SI5935CDC-T1-GE3

Mfr. #:
Buy SI5935CDC-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 8V Vgs 1206-8 ChipFET
Lifecycle:
New from this manufacturer.
Delivery:
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