IXYS reserves the right to change limits, test conditions, and dimensions.
IXTK 120N20P
IXTQ 120N20P
Symbol Test Conditions Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Min. Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test 40 63 S
C
iss
6000 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 1300 pF
C
rss
265 pF
t
d(on)
30 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
35 ns
t
d(off)
R
G
= 3.3 Ω (External) 100 ns
t
f
31 ns
Q
g(on)
152 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
40 nC
Q
gd
75 nC
R
thJC
0.21° C/W
R
thCS
TO-3P 0.21 ° C/W
R
thCS
TO-264 0.15 ° C/W
Source-Drain Diode Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
V
GS
= 0 V 120 A
I
SM
Repetitive 300 A
V
SD
I
F
= I
S
, V
GS
= 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
I
F
= 25 A, -di/dt = 100 A/µs 180 ns
Q
RM
V
R
= 100 V, V
GS
= 0 V 3.0 µC
TO-264 (IXTK) Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
Dim.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
TO-3P (IXTQ) Outline
